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BF1206F View Datasheet(PDF) - Philips Electronics

Part Name
Description
Manufacturer
BF1206F
Philips
Philips Electronics Philips
BF1206F Datasheet PDF : 20 Pages
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Philips Semiconductors
BF1206F
Dual N-channel dual gate MOSFET
1.4 Quick reference data
Table 1: Quick reference data
Per MOSFET unless otherwise specified.
Symbol Parameter
Conditions
VDS
drain-source voltage (DC)
ID
drain current (DC)
|yfs|
forward transfer admittance ID = 4 mA
amplifier A
amplifier B
Ciss(G1) input capacitance at gate1
ID = 4 mA; f = 100 MHz
amplifier A
amplifier B
NF
noise figure
ID = 4 mA
amplifier A; f = 400 MHz
amplifier B; f = 800 MHz
Xmod cross modulation
input level for k = 1 % at
40 dB AGC
amplifier A
amplifier B
Min Typ Max Unit
- - 6V
- - 30 mA
17 22 32 mS
17 22 32 mS
- 2.4 2.9 pF
- 1.7 2.2 pF
- 1.0 1.6 dB
- 1.0 1.6 dB
92 97 -
93 98 -
dBµV
dBµV
2. Pinning information
Table 2:
Pin
1
2
3
4
5
6
Discrete pinning
Description
gate1 (AMP A)
source
gate1 (AMP B)
drain (AMP B)
drain (AMP A)
gate2
Simplified outline Symbol
654
AMP A
G1A
G2
123
S
DA
AMP B
G1B
DB
sym111
3. Ordering information
Table 3: Ordering information
Type number Package
Name Description
BF1206F
-
plastic surface mounted package; 6 leads
Version
SOT666
BF1206F_1
Product data sheet
Rev. 01 — 30 January 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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