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BF1206F View Datasheet(PDF) - Philips Electronics

Part Name
Description
Manufacturer
BF1206F
Philips
Philips Electronics Philips
BF1206F Datasheet PDF : 20 Pages
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Philips Semiconductors
BF1206F
Dual N-channel dual gate MOSFET
4. Marking
Table 4: Marking
Type number
BF1206F
Marking code
2N
5. Limiting values
Table 5: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Per MOSFET
VDS
drain-source voltage (DC)
-
ID
drain current (DC)
-
IG1
gate1 current
-
IG2
gate2 current
-
Ptot
total power dissipation
Tsp 107 °C [1] -
Tstg
storage temperature
65
Tj
junction temperature
-
[1] Tsp is the temperature at the solder point of the source lead.
Max
6
30
±10
±10
180
+150
150
Unit
V
mA
mA
mA
mW
°C
°C
250
Ptot
(mW)
200
001aac193
150
100
50
0
0
50
Fig 1. Power derating curve
100
150
200
Tsp (˚C)
6. Thermal characteristics
BF1206F_1
Product data sheet
Table 6:
Symbol
Rth(j-sp)
Thermal characteristics
Parameter
thermal resistance from junction
to solder point
Conditions
Typ
Unit
240
K/W
Rev. 01 — 30 January 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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