BF1206F View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
BF1206F Datasheet PDF : 20 Pages
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Philips Semiconductors
BF1206F
Dual N-channel dual gate MOSFET
102
bis, gis
(mS)
10
1
10−1
001aad907
bis
gis
102
Yfs
(mS)
10
001aad908 −102
Yfs
ϕfs
(deg)
ϕfs
−10
10−2
10
102
103
f (MHz)
VDS(A) = 2.8 V; VG2-S = 2.5 V; VDS(B) = 0 V;
ID(A) = 4 mA.
Fig 13. Amplifier A: input admittance and phase as a
function of frequency; typical values
102
001aad909 102
ϕrs
Yrs
(µS)
10
Yrs
ϕrs
(deg)
10
1
−1
10
102
103
f (MHz )
VDS(A) = 2.8 V; VG2-S = 2.5 V; VDS(B) = 0 V;
ID(A) = 4 mA.
Fig 14. Amplifier A: forward transfer admittance and
phase as a function of frequency; typical values
10
bos, gos
(mS)
1
001aad910
bos
10−1
gos
1
1
10−2
10
102
103
10
102
103
f (MHz )
f (MHz)
VDS(A) = 2.8 V; VG2-S = 2.5 V; VDS(B) = 0 V;
ID(A) = 4 mA.
Fig 15. Amplifier A: reverse transfer admittance and
phase as a function of frequency: typical values
VDS(A) = 2.8 V; VG2-S = 2.5 V; VDS(B) = 0 V;
ID(A) = 4 mA.
Fig 16. Amplifier A: output admittance and phase as a
function of frequency; typical values
BF1206F_1
Product data sheet
Rev. 01 — 30 January 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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