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BF1208D View Datasheet(PDF) - Philips Electronics

Part Name
Description
Manufacturer
BF1208D
Philips
Philips Electronics Philips
BF1208D Datasheet PDF : 22 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
NXP Semiconductors
BF1208D
Dual N-channel dual gate MOSFET
10
bos, gos
(mS)
1
101
001aag360
bos
gos
102
10
102
103
f (MHz)
VDS(A) = 5 V; VG2-S = 4 V; VDS(B) = VG1-S(B) = 0 V; ID(A) = 19 mA
Fig 16. Amplifier A: output admittance as a function of frequency; typical values
8.1.2 Scattering parameters for amplifier A
Table 9. Scattering parameters for amplifier A
VDS(A) = 5 V; VG2-S = 4 V; ID(A) = 19 mA; VDS(B) = 0 V; VG1-S(B) = 0 V; Tamb = 25 °C; typical values.
f
(MHz)
s11
Magnitude
(ratio)
Angle
(deg)
s21
Magnitude
(ratio)
Angle
(deg)
s12
Magnitude
(ratio)
Angle
(deg)
s22
Magnitude
(ratio)
Angle
(deg)
40
0.992
3.037 3.21
177.04 0.00763 87.34 0.992
1.139
100 0.99152 7.62 3.13270 172.06 0.00182 85.21 0.99168 2.93
200 0.98685 15.12 3.11006 164.12 0.00350 78.32 0.99047 5.83
300 0.97979 22.49 3.06743 156.24 0.00511 73.45 0.98876 8.72
400 0.97176 29.74 3.01634 148.56 0.00664 69.12 0.98662 11.57
500 0.96209 36.76 2.95125 141.00 0.00805 64.73 0.98424 14.39
600 0.95108 43.63 2.87828 133.56 0.00931 60.38 0.98168 17.21
700 0.93915 50.35 2.79946 126.28 0.01042 56.16 0.97884 19.97
800 0.92742 56.82 2.71508 119.20 0.01141 52.16 0.97630 22.68
900 0.91573 62.95 2.62937 112.29 0.01224 48.31 0.97350 25.42
1000 0.90429 68.83 2.54239 105.56 0.01297 44.63 0.97115 28.14
8.1.3 Noise data for amplifier A
Table 10. Noise data for amplifier A
VDS(A) = 5 V; VG2-S = 4 V; ID(A) = 19 mA; VDS(B) = 0 V; VG1-S(B) = 0 V; Tamb = 25 °C; typical values;
unless otherwise specified.
f (MHz)
NFmin (dB)
Γopt
(ratio)
(deg)
rn (ratio)
400
0.9
0.77
22.7
0.65
800
1.1
0.73
45.75
0.62
BF1208D_1
Product data sheet
Rev. 01 — 16 May 2007
© NXP B.V. 2007. All rights reserved.
10 of 22
 

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