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BF1208D View Datasheet(PDF) - Philips Electronics

Part Name
Description
Manufacturer
BF1208D
Philips
Philips Electronics Philips
BF1208D Datasheet PDF : 22 Pages
First Prev 11 12 13 14 15 16 17 18 19 20 Next Last
NXP Semiconductors
BF1208D
Dual N-channel dual gate MOSFET
100
IG1
(µA)
80
60
001aag363
(1)
(2)
(3)
40
(4)
20
0
0
(5)
(6)
(7)
0.4
0.8
1.2
1.6
2.0
VG1-S (V)
(1) VG2-S = 4 V.
(2) VG2-S = 3.5 V.
(3) VG2-S = 3 V.
(4) VG2-S = 2.5 V.
(5) VG2-S = 2 V.
(6) VG2-S = 1.5 V.
(7) VG2-S = 1 V.
VDS(B) = 5 V; VDS(A) = VG1-S(A) = 0 V; Tj = 25 °C.
Fig 19. Amplifier B: gate1 current as a function of
gate1 voltage; typical values
20
ID
(mA)
16
001aag365
40
Yfs
(mS)
32
24
001aag364
(1)
(2)
(3)
(4)
16
8
(6)
(7)
0
0
8
(5)
16
24
32
ID (mA)
(1) VG2-S = 4 V.
(2) VG2-S = 3.5 V.
(3) VG2-S = 3 V.
(4) VG2-S = 2.5 V.
(5) VG2-S = 2 V.
(6) VG2-S = 1.5 V.
(7) VG2-S = 1 V.
VDS(B) = 5 V; VDS(A) = VG1-S(A) = 0 V; Tj = 25 °C.
Fig 20. Amplifier B: forward transfer admittance as a
function of drain current; typical values
20
ID
(mA)
16
001aag366
12
12
8
8
4
4
0
0
10
20
30
40
50
IG1 (µA)
0
0
1
2
3
4
5
VGG (V)
VDS(B) = 5 V; VG2-S = 4 V; VDS(A) = VG1-S(A) = 0 V;
Tj = 25 °C.
Fig 21. Amplifier B: drain current as a function of gate1
current; typical values
VDS(B) = 5 V; VG2-S = 4 V; VDS(A) = VG1-S(A) = 0 V;
Tj = 25 °C; RG1 = 86 k(connected to VGG); see
Figure 3.
Fig 22. Amplifier B: drain current as a function of gate1
supply voltage; typical values
BF1208D_1
Product data sheet
Rev. 01 — 16 May 2007
© NXP B.V. 2007. All rights reserved.
13 of 22

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