DatasheetQ Logo
Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits

BF1208D View Datasheet(PDF) - Philips Electronics

Part Name
Description
Manufacturer
BF1208D
Philips
Philips Electronics Philips
BF1208D Datasheet PDF : 22 Pages
First Prev 11 12 13 14 15 16 17 18 19 20 Next Last
NXP Semiconductors
BF1208D
Dual N-channel dual gate MOSFET
25
ID
(mA)
20
15
10
5
001aag367
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
24
ID
(mA)
16
8
001aag368
(1)
(2)
(3)
(4)
(5)
0
0
1
2
3
4
5
VGG = VDS (V)
0
0
2
4
6
VG2-S (V)
(1) RG1 = 47 k.
(2) RG1 = 56 k.
(3) RG1 = 68 k.
(4) RG1 = 82 k.
(5) RG1 = 86 k.
(6) RG1 = 100 k.
(7) RG1 = 120 k.
(8) RG1 = 150 k.
(9) RG1 = 180 k.
VG2-S = 4 V; VDS(A) = VG1-S(A) = 0 V; Tj = 25 °C;
RG1 is connected to VGG; see Figure 3.
Fig 23. Amplifier B: drain current as a function of gate1
supply voltage and drain supply voltage; typical
values
(1) VGG = 5.0 V.
(2) VGG = 4.5 V.
(3) VGG = 4.0 V.
(4) VGG = 3.5 V.
(5) VGG = 3.0 V.
VDS(B) = 5 V; VDS(A) = VG1-S(A) = 0 V; Tj = 25 °C;
RG1 = 86 k(connected to VGG); see Figure 3.
Fig 24. Amplifier B: drain current as a function of gate2
voltage; typical values
BF1208D_1
Product data sheet
Rev. 01 — 16 May 2007
© NXP B.V. 2007. All rights reserved.
14 of 22

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]