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BF1208D View Datasheet(PDF) - Philips Electronics

Part Name
Description
Manufacturer
BF1208D
Philips
Philips Electronics Philips
BF1208D Datasheet PDF : 22 Pages
First Prev 11 12 13 14 15 16 17 18 19 20 Next Last
NXP Semiconductors
BF1208D
Dual N-channel dual gate MOSFET
50
IG1
(µA)
40
30
20
001aag369
(1)
(2)
(3)
(4)
(5)
10
0
0
2
4
6
VG2-S (V)
(1) VGG = 5.0 V.
(2) VGG = 4.5 V.
(3) VGG = 4.0 V.
(4) VGG = 3.5 V.
(5) VGG = 3.0 V.
VDS(B) = 5 V; VDS(A) = VG1-S(A) = 0 V; Tj = 25 °C;
RG1 = 86 k(connected to VGG); see Figure 3.
Fig 25. Amplifier B: gate1 current as a function of
gate2 voltage; typical values
0
gain
reduction
(dB)
10
001aag371
20
30
40
50
0
1
2
3
4
VAGC (V)
VDS(B) = 5 V; VGG = 5 V; VDS(A) = VG1-S(A) = 0 V;
RG1 = 86 k(connected to VGG); f = 50 MHz;
Tamb = 25 °C; see Figure 34.
Fig 27. Amplifier B: gain reduction as a function of
AGC voltage; typical values
120
Vunw
(dBµV)
110
001aag370
100
90
80
0
20
40
60
gain reduction (dB)
VDS(B) = 5 V; VGG = 5 V; VDS(A) = VG1-S(A) = 0 V;
RG1 = 86 k(connected to VGG); fw = 50 MHz;
funw = 60 MHz; Tamb = 25 °C; see Figure 34.
Fig 26. Amplifier B: unwanted voltage
for 1 % cross modulation as a function of gain
reduction; typical values
24
ID
(mA)
18
001aag372
12
6
0
0
20
40
60
gain reduction (dB)
VDS(B) = 5 V; VGG = 5 V; VDS(A) = VG1-S(A) = 0 V;
RG1 = 86 k(connected to VGG); f = 50 MHz;
Tamb = 25 °C; see Figure 34.
Fig 28. Amplifier B: drain current as a function of gain
reduction; typical values
BF1208D_1
Product data sheet
Rev. 01 — 16 May 2007
© NXP B.V. 2007. All rights reserved.
15 of 22

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