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BF1208D View Datasheet(PDF) - Philips Electronics

Part Name
Description
Manufacturer
BF1208D
Philips
Philips Electronics Philips
BF1208D Datasheet PDF : 22 Pages
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NXP Semiconductors
BF1208D
Dual N-channel dual gate MOSFET
8.2.2 Scattering parameters for amplifier B
Table 12. Scattering parameters for amplifier B
VDS(B) = 5 V; VG2-S = 4 V; ID(B) = 15 mA; VDS(A) = 0 V; VG1-S(A) = 0 V; Tamb = 25 °C; typical values.
f
(MHz)
s11
Magnitude
(ratio)
Angle
(deg)
s21
Magnitude
(ratio)
Angle
(deg)
s12
Magnitude
(ratio)
Angle
(deg)
s22
Magnitude
(ratio)
Angle
(deg)
40
0.9830
3.09 2.96410 176.88 0.00070 87.02 0.9920
1.22
100 0.98257 7.62 2.92951 171.69 0.00176 86.41 0.99190 3.22
200 0.97956 15.00 2.90869 163.43 0.00339 83.66 0.99064 6.42
300 0.97446 22.33 2.86877 155.20 0.00501 81.33 0.98894 9.59
400 0.96849 29.56 2.82073 147.13 0.00663 79.12 0.98688 12.74
500 0.96112 36.62 2.75891 139.15 0.00820 76.85 0.98454 15.88
600 0.95238 43.55 2.68790 131.26 0.00967 74.48 0.98181 19.02
700 0.94282 50.37 2.61038 123.50 0.01110 72.29 0.97880 22.13
800 0.93319 56.94 2.52719 115.92 0.01250 70.11 0.97585 25.20
900 0.92326 63.22 2.44054 108.46 0.01379 67.93 0.97175 28.30
1000 0.91325 69.31 2.35036 101.13 0.01506 65.65 0.96801 31.40
8.2.3 Noise data for amplifier B
Table 13. Noise data for amplifier B
VDS(B) = 5 V; VG2-S = 4 V; ID(B) = 15 mA; VDS(A) = 0 V; VG1-S(A) = 0 V; Tamb = 25 °C; typical values;
unless otherwise specified.
f (MHz)
NFmin (dB)
Γopt
(ratio)
(deg)
rn ()
400
1.1
0.72
22.83
0.66
800
1.4
0.68
46.42
0.64
BF1208D_1
Product data sheet
Rev. 01 — 16 May 2007
© NXP B.V. 2007. All rights reserved.
17 of 22

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