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BF1208D View Datasheet(PDF) - Philips Electronics

Part Name
Description
Manufacturer
BF1208D
Philips
Philips Electronics Philips
BF1208D Datasheet PDF : 22 Pages
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NXP Semiconductors
BF1208D
Dual N-channel dual gate MOSFET
Table 8. Dynamic characteristics for amplifier A[1] …continued
Common source; Tamb = 25 °C; VG2-S = 4 V; VDS = 5 V; ID = 19 mA; unless otherwise specified.
Symbol Parameter
Conditions
Min Typ
Xmod cross modulation
input level for k = 1 %; fw = 50 MHz;
funw = 60 MHz
at 0 dB AGC
[3]
90 -
at 10 dB AGC
- 90
at 20 dB AGC
- 99
at 40 dB AGC
102 105
[1] For the MOSFET not in use: VG1-S(B) = 0 V; VDS(B) = 0 V.
[2] Calculated from S-parameters.
[3] Measured in Figure 33 test circuit.
8.1.1 Graphics for amplifier A
Max Unit
-
dBµV
-
dBµV
-
dBµV
-
dBµV
30
ID
(mA)
20
001aaa554
(1)
(2)
(3)
(4)
(5)
10
(6)
(7)
0
0
0.4
0.8
1.2
1.6
2
VG1-S (V)
(1) VG2-S = 4 V.
(2) VG2-S = 3.5 V.
(3) VG2-S = 3 V.
(4) VG2-S = 2.5 V.
(5) VG2-S = 2 V.
(6) VG2-S = 1.5 V.
(7) VG2-S = 1 V.
VDS(A) = 5 V; VG1-S(B) = VDS(B) = 0 V; Tj = 25 °C.
Fig 4. Amplifier A: transfer characteristics; typical
values
32
ID
(mA)
24
16
8
001aaa555
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
0
0
2
4
6
VDS (V)
(1) VG1-S(A) = 1.8 V.
(2) VG1-S(A) = 1.7 V.
(3) VG1-S(A) = 1.6 V.
(4) VG1-S(A) = 1.5 V.
(5) VG1-S(A) = 1.4 V.
(6) VG1-S(A) = 1.3 V.
(7) VG1-S(A) = 1.2 V.
(8) VG1-S(A) = 1.1 V.
(9) VG1-S(A) = 1 V.
VG2-S = 4 V; VG1-S(B) = VDS(B) = 0 V; Tj = 25 °C.
Fig 5. Amplifier A: output characteristics; typical
values
BF1208D_1
Product data sheet
Rev. 01 — 16 May 2007
© NXP B.V. 2007. All rights reserved.
6 of 22

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