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BF1208D View Datasheet(PDF) - Philips Electronics

Part Name
Description
Manufacturer
BF1208D
Philips
Philips Electronics Philips
BF1208D Datasheet PDF : 22 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
NXP Semiconductors
BF1208D
Dual N-channel dual gate MOSFET
40
yfs
(mS)
30
001aaa556
(1)
(2)
20
(3)
10
0
0
(4)
(5)
(6)
8
16
24
32
ID (mA)
(1) VG2-S = 4 V.
(2) VG2-S = 3.5 V.
(3) VG2-S = 3 V.
(4) VG2-S = 2.5 V.
(5) VG2-S = 2 V.
(6) VG2-S = 1.5 V.
VDS(A) = 5 V; VG1-S(B) = VDS(B) = 0 V; Tj = 25 °C.
Fig 6. Amplifier A: forward transfer admittance as a
function of drain current; typical values
20
ID(A)
(mA)
16
001aac206
12
8
4
0
0
20
40
60
ID(B) (µA)
VDS(A) = 5 V; VG2-S = 4 V; VDS(B) = 5 V;
VG1-S(B) = 0 V; Tj = 25 °C.
ID(B) = internal gate1 current = current in pin
drain (AMP B) if MOSFET (B) is switched off.
Fig 7. Amplifier A: drain current as a function of
internal gate1 current; typical values
BF1208D_1
Product data sheet
Rev. 01 — 16 May 2007
© NXP B.V. 2007. All rights reserved.
7 of 22

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