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1N5059 View Datasheet(PDF) - Diode Semiconductor Korea

Part Name
Description
Manufacturer
1N5059
DSK
Diode Semiconductor Korea DSK
1N5059 Datasheet PDF : 2 Pages
1 2
Diode Semiconductor Korea
1N5059---1N5062
PLASTIC SILICON RECTIFIERS
VOLTAGE RANGE: 200---800 V
CURRENT: 2.0 A
FEATURES
Low cost
Diffus ed junction
Glass passivated chips
Low forward voltage drop
High crrent capability
Eas ily cleaned with Freon,Alcohol, ls opropand
and s im ilar s olvents
MECHANICAL DATA
Cas e: JEDEC DO-15, m olded plas tic
Term inals : Axial leads ,s olderable per MIL-STD
-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.014 ounces , 0.39gram s
Mounting: Any
DO - 15
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 am bient tem perature unles s otherwis e s pecified.
Single phas e,half wave,50 Hz,res is tive or inductive load. For capacitive load,derate by 20%.
1N5059
Maximum recurrent peak reverse voltage
VR R M
200
Maximum RMS voltage
V R MS
140
Maximum DC blocking voltage
VDC
200
Maximum average forw ard rectif ied current
9.5mm lead length, @TA=50
IF (AV)
Peak f orw ard surge current
10ms single half -sine-w ave
superimposed on rated load
@TJ =125
Maximum instantaneous
@1.0A
forw ard voltage
@ 2.5A
IF SM
VF
Maximum reverse current
@TA=25
IR
at rated DC blocking voltage @TA=150
Maximum reverse recovery time (Note1)
trr
Typical junction capacitance
(Note2)
Typical thermal resistance
(Note3)
Operating junction temperature range
CJ
RθJA
TJ
Storage temperature range
TSTG
N OTE: 1.Measured with IF=0.5A, IR=1A, Irr=0.25A.
2. Measured at 1.0MHZ and applied rev erse v oltage of 0V DC.
3. Thermal resistance from junction to ambient.
1N5060
400
280
400
1N5061
600
420
600
2.0
50.0
1.2
1.15
5.0
100
4.0
40
45
- 55 ----- + 175
- 55 ----- + 175
1N5062
800
560
800
UNITS
V
V
V
A
A
V
A
µs
pF
K/W
www.diode.kr
 

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