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KTA1298 View Datasheet(PDF) - Jiangsu Changjiang Electronics Technology Co., Ltd

Part Name
Description
Manufacturer
KTA1298
Jiangsu
Jiangsu Changjiang Electronics Technology Co., Ltd Jiangsu
KTA1298 Datasheet PDF : 3 Pages
1 2 3
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T
SOT-23 Plastic-Encapsulate Transistors
KTA1298 TRANSISTOR (PNP)
FEATURES
z Low frequency power amplifier application
z Power switching application
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (Ta=25unless otherwise noted)
Symbol Parameter
Value
Unit
VCBO
Collector-Base Voltage
-35
V
VCEO
Collector-Emitter Voltage
-30
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current –Continuous
-0.8
A
PC*
Collector Dissipation
200
mW
TJ
Junction Temperature
150
Tstg
Storage Temperature
-55-150
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base- emitter voltage
Transition frequency
Collector output capacitance
Symbol
Test conditions
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE
fT
Cob
IC=- 1mA,IE=0
IC= -10mA, IB=0
IE=-1mA, IC=0
VCB=-30 V,IE=0
VEB= -5V,IC=0
VCE=-1V, IC=-100mA
VCE=-1V, IC=-800mA
IC=-500mA, IB= -20mA
VCE=-1V, IC=-10mA
VCE=-5V, IC=-10mA,
VCB=-10V, IE=0,f=1MHz
Min
-35
-30
-5
100
40
-0.5
Typ
120
13
Max Unit
V
V
V
-0.1
μA
-0.1
μA
320
-0.4
V
-0.8
V
MHz
pF
CLASSIFICATION OF hFE(1)
Rank
Range
MARKING
O
100-200
IO
Y
160-320
IY
www.cj-elec.com
1
BA,OJucnt,2014
 

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