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BF1206 Datasheet - NXP

BF1206 Datasheet PDF NXP Semiconductors.

Part Name
BF1206

Other PDF
  not available.

PDF

page
22 Pages

File Size
630.7 kB

MFG CO.
NXP
NXP Semiconductors. GO URL

DESCRIPTION
The BF1206 is a combination of two different dual gate MOS-FET amplifiers with shared source and gate 2 leads. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross-modulation performance during AGC. Integrated diodes between the gates and source protect against excessive input voltage surges. The transistor is encapsulated in SOT363 micro-miniature plastic package.


FEATURES
• Two low noise gain controlled amplifiers in a single package
• Superior cross-modulation performance during AGC
• High forward transfer admittance
• High forward transfer admittance to input capacitance ratio.


APPLICATIONS
• Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply voltage, such as digital and analog television tuners.

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Part Name
Description
PDF
MFG CO.
Dual N-channel dual gate MOS-FET
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Dual N-channel dual gate MOS-FET ( Rev : 1999 )
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Dual N-channel dual gate MOS-FET
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Dual N-channel dual gate MOS-FET
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Dual N-channel dual gate MOS-FET
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N-channel dual-gate MOS-FET
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N-channel dual-gate MOS-FET
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N-channel dual-gate MOS-FET
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