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IXZR16N60 Datasheet - IXYS

IXZR16N60 Datasheet PDF IXYS CORPORATION

Part Name
IXZR16N60

Other PDF
  not available.

PDF

page
4 Pages

File Size
159.7 kB

MFG CO.
IXYS
IXYS CORPORATION GO URL

VDSS = 600 V
ID25 = 18 A
RDS(on) ≤ 0.56 Ω
PDC = 350

Low Capacitance Z-MOSTM MOSFET Process
Optimized for RF Operation
Ideal for Class C, D, & E Applications

Features
• Isolated Substrate
− high isolation voltage (>2500V)
− excellent thermal transfer
− Increased temperature and power cycling capability
• IXYS advanced Z-MOS process
• Low gate charge and capacitances
− easier to drive
− faster switching
• Low RDS(on)
• Very low insertion inductance (<2nH)
• No beryllium oxide (BeO) or other hazardous materials

Advantages
• High Performance RF Z-MOS™
• Optimized for RF and high speed
• Common Source RF Package
A = Gate Source Drain
B = Drain Source Gate
• Isolated Package, no insulator required

Page Link's: 1  2  3  4 
 

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