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MJE13009 Datasheet - ETC

MJE13009 Datasheet PDF ETC

Part Name
MJE13009

Other PDF
  not available.

PDF

page
6 Pages

File Size
82.3 kB

MFG CO.
ETC
ETC GO URL

[ARTSCHIP]

Description
The MJE13009 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch-controls, Solenoid/Relay drivers and Deflection circuits.

Specification Features
• VCEO(sus)=400V
• Reverse Bias SOA with Inductive Loads @TC=100°C
• Inductive Switching Matrix 3 to 12 Amp., 25 and 100°C…tc@8A, 100°C is 120ns(Typ.)
• 700V Blocking Capability
• SOA and Switching Applications Information


Part Name
Description
PDF
MFG CO.
12 AMPERE NPN SILICON POWER TRANSISTOR
Hi-Sincerity Mocroelectronics
12 AMPERE NPN SILICON POWER TRANSISTOR
ARTSCHIP ELECTRONICS CO.,LMITED.
12 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS − 100 WATTS
ON Semiconductor
15 AMPERE NPN SILICON POWER TRANSISTORS
New Jersey Semiconductor
12 AMPERE PNP SILICON POWER TRANSISTORS 40 VOLTS 100 WATTS
Mospec Semiconductor
12 AMPERE PNP SILICON POWER TRANSISTORS 40 VOLTS 100 WATTS
Boca Semiconductor
12 AMPERE POWER TRANSISTORS 140 VOLTS 100 WATTS
Mospec Semiconductor
5 AMPERE POWER TRANSISTOR NPN SILICON 200 VOLTS 100 WATTS
Motorola => Freescale
30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS - 200 WATTS
New Jersey Semiconductor
0.5 AMPERE POWER TRANSISTOR NPN SILICON 300 VOLTS, 20 WATTS
ON Semiconductor

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