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SI4104DY(2008) Datasheet - Vishay

SI4104DY Datasheet PDF Vishay Semiconductors

Part Name
SI4104DY

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4 Pages

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128.8 kB

MFG CO.
Vishay
Vishay Semiconductors GO URL

DESCRIPTION
The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0-V to 10-V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage.

CHARACTERISTICS
• N-Channel Vertical DMOS
• Macro Model (Subcircuit Model)
• Level 3 MOS
• Apply for both Linear and Switching Application
• Accurate over the −55 to 125°C Temperature Range
• Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics

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