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SI4401DDY Datasheet - ETC

SI4401DDY Datasheet PDF ETC

Part Name
SI4401DDY

Other PDF
  not available.

PDF

page
4 Pages

File Size
960.4 kB

MFG CO.
ETC
ETC GO URL

[SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]

Description:
This P-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.


FEATUREs:
1) VDS=-40V,ID=-10A,RDS(ON)<15mΩ @VGS=-10V
2) Low gate charge.
3) Green device available.
4) Advanced high cell denity trench technology for ultra RDS(ON).
5) Excellent package for good heat dissipation.

Page Link's: 1  2  3  4 

Part Name
Description
View
MFG CO.
P-Channel MOSFET uses advanced trench technology
PDF
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
P-Channel MOSFET uses advanced trench technology
PDF
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
P-Channel MOSFET uses advanced trench technology
PDF
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
P-Channel MOSFET uses advanced trench technology
PDF
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
P-Channel MOSFET uses advanced trench technology
PDF
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
P-Channel MOSFET uses advanced trench technology
PDF
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
P-Channel MOSFET uses advanced trench technology
PDF
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
P-Channel MOSFET uses advanced trench technology
PDF
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
P-Channel MOSFET uses advanced trench technology
PDF
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
P-Channel MOSFET uses advanced trench technology
PDF
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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