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STB55NF06(2012) Datasheet - STMICROELECTRONICS

STB55NF06 Datasheet PDF STMicroelectronics

Part Name
STB55NF06

Other PDF
  lastest PDF  

PDF

page
19 Pages

File Size
790.6 kB

MFG CO.
STMICROELECTRONICS
STMicroelectronics GO URL

Description
These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.

Features
■ 100% avalanche tested
■ Exceptional dv/dt capability

Applications
■ Switching application


Part Name
Description
PDF
MFG CO.
N-CHANNEL 60V - 0.015 Ω - 50A TO-220/TO-220FP/I²PAK/D²PAKSTripFET™ II POWER MOSFET
STMicroelectronics
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N-channel 525 V, 0.41 Ω, 10 A SuperMESH3™ Power MOSFET in D²PAK,TO-220FP and TO-220 packages
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N-channel 500 V, 0.1 Ω typ., 22 A MDmesh™ II Power MOSFET in D²PAK, TO-220FP, TO-220, TO-247 packages
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N-channel 600 V, 0.20 Ω typ., 16 A MDmesh™ II Power MOSFETs in D²PAK, TO-220FP and TO-220 packages ( Rev : 2018 )
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N-channel 500 V, 0.28 Ω typ., 12 A MDmesh™ II Power MOSFETs in TO-220FP, I²PAK and TO-220 packages ( Rev : 2014 )
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N-channel 600 V, 0.27 Ω, 13 A MDmesh™ II Power MOSFET in TO-220, TO-220FP, TO-247, D²PAK and I²PAK
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N-channel 800 V, 0.25 Ω, 17 A, MDmesh™ Power MOSFET in D²PAK, TO-220FP, TO-220 and TO-247 packages
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