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STFW4N150(2009) Datasheet - ST-Microelectronics

STFW4N150 Datasheet PDF STMicroelectronics

Part Name
STFW4N150

Other PDF
  lastest PDF  

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page
15 Pages

File Size
753 kB

MFG CO.
ST-Microelectronics
STMicroelectronics GO URL

Description
Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances.
The strengthened layout coupled with the company’s proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.


FEATUREs
■ 100% avalanche tested
■ Intrinsic capacitances and Qg minimized
■ High speed switching
■ Fully isolated TO-3PF plastic packages
■ Creepage distance path is 5.4 mm (typ.) for
   TO-3PF


APPLICATION
■ Switching applications


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