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STP36N06FI Datasheet - ST-Microelectronics

STP36N06FI Datasheet PDF STMicroelectronics

Part Name
STP36N06FI

Other PDF
  not available.

PDF

page
10 Pages

File Size
196 kB

MFG CO.
ST-Microelectronics
STMicroelectronics GO URL

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

■ TYPICAL RDS(on) = 0.03 Ω
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100°C
■ LOW GATE CHARGE
■ HIGH CURRENT CAPABILITY
■ 175°C OPERATING TEMPERATURE
■ APPLICATION ORIENTED CHARACTERIZATION


APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SOLENOID AND RELAY DRIVERS
■ REGULATORS
■ DC-DC & DC-AC CONVERTERS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ AUTOMOTIVE ENVIRONMENT (INJECTION,
   ABS, AIR-BAG, LAMPDRIVERS, Etc.)


Part Name
Description
PDF
MFG CO.
N-Channel Enhancement Mode Power MOS Transistor
ARTSCHIP ELECTRONICS CO.,LMITED.
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
Unspecified
N-Channel Enhancement Mode Power MOS Transistor
Signal Processing Technologies
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
New Jersey Semiconductor
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ( Rev : 2010 )
Unisonic Technologies
N-channel enhancement mode MOS transistor
Philips Electronics
N-channel enhancement mode MOS transistor
Philips Electronics
N-channel enhancement mode MOS transistor ( Rev : 1994 )
Philips Electronics
N-Channel Enhancement-Mode MOS Transistor
Calogic, LLC
N-channel enhancement mode MOS transistor
Philips Electronics

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