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TK40P03M1(2011) Datasheet - Toshiba

TK40P03M1 Datasheet PDF Toshiba

Part Name
TK40P03M1

Other PDF
  lastest PDF  

PDF

page
9 Pages

File Size
241.5 kB

MFG CO.
Toshiba
Toshiba GO URL

Features
(1) High-speed switching
(2) Low gate charge: QSW = 5.7 nC (typ.)
(3) Low drain-source on-resistance: RDS(ON) = 8.3 mΩ (typ.) (VGS = 10 V)
(4) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)
(5) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA)

Applications
• DC-DC Converters
• Desktop PCs


Part Name
Description
PDF
MFG CO.
MOSFETs Silicon N-Channel MOS (U-MOS-H)
Unspecified
MOSFETs Silicon N-Channel MOS (U-MOSVI-H)
Unspecified
MOSFETs Silicon N-Channel MOS (U-MOSVI-H)
Unspecified
MOSFETs Silicon P-Channel MOS (U-MOS-H)
Unspecified
MOSFETs Silicon N-channel MOS (U-MOSIV)
Inchange Semiconductor
MOSFETs Silicon N-channel MOS (U-MOSIV)
NXP Semiconductors.
MOSFETs Silicon N-channel MOS (U-MOSIV) ( Rev : 2011 )
Inchange Semiconductor
MOSFETs Silicon N-Channel MOS (TMOSⅣ)
Unspecified
MOSFETs Silicon N-Channel MOS (DTMOSIV)
NXP Semiconductors.
MOSFETs Silicon N-Channel MOS (DTMOS)
Unspecified

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