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1N5711

  

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1N5711_Old_V [400 mWatt Small Signal Schottky Diode 60 to 70 Volts ] MCC
Micro Commercial Components

Schottky Barrier Switching Diode

Features
● Fast Switching Speed
● High Reverse Breakdown Voltage
● Low Forward Voltage Drop
● For General Purpose Application

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1N5711 [400 mWatt Small Signal Schottky Diode 60 to 70 Volts ]

other parts : 1N6263  1N5711-TP  1N5711-AP  1N5711-BP  1N6263-TP  1N6263-AP  1N6263-BP 

MCC
Micro Commercial Components

Features
• Moisture Sensitivity: Level 1 per J-STD-020C
• High Reverse Breakdown Voltage
• Low Forward Voltage Drop
• For General Purpose Application
• Marking : Cathode band and type number
• Lead Free Finish/Rohs Compliant (Note1) ("P"Suffix designates
   Compliant. See ordering information)

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1N5711 [Schottky Barrier Diodes for General Purpose Applications ]

other parts : 5082-2300  5082-2303  5082-2800  5082-2810  5082-2811  5082-2835  5082-2900 

HP
HP => Agilent Technologies

Description
The 1N5711, 1N5712, 5082-2800/10/11 are passivated Schottky barrier diodes which use a patented “guard ring” design to achieve a high breakdown voltage. Packaged in a low cost
glass package, they are well suited for high level detecting, mixing, switching, gating, log or A-D converting, video detecting, frequency discriminating, sampling, and wave shaping.

Features
• Low Turn-On Voltage As Low as 0.34 V at 1 mA
• Pico Second Switching Speed
• High Breakdown Voltage Up to 70 V
• Matched Characteristics Available

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1N5711_1997 [SCHOTTKY BARRIER DIODES LEADLESS PACKAGE FOR SURFACE MOUNT ]

other parts : DSB2810_1997  DSB5712_1997  1N5711-1_1997  1N6857-1_1997  1N5712-1_1997  1N6858-1_1997 

Microsemi
Microsemi Corporation

SCHOTTKY BARRIER DIODES

– LOW REVERSE LEAKAGE CHARACTERISTICS
– METALLURGICALLY BONDED
   Qualified per MIL-PRF-19500/444

* These devices are only available as Commercial Level Product.

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1N5711_2011 [SCHOTTKY BARRIER DIODES LEADLESS PACKAGE FOR SURFACE MOUNT ]

other parts : 1N5712_2011  1N5711UB_2011  1N5712UB_2011  1N5711UBD_2011  1N5712UBD_2011  1N5711UBCA_2011  1N5711UBCC_2011  1N5712UBCA_2011  1N5712UBCC_2011 

Microsemi
Microsemi Corporation

SCHOTTKY BARRIER DIODES
LEADLESS PACKAGE FOR SURFACE MOUNT
Qualified per MIL-PRF-19500/444

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1N5711 [SCHOTTKY BARRIER DIODES LEADLESS PACKAGE FOR SURFACE MOUNT ]

other parts : 1N5712  1N5711UB  1N5712UB  1N5711UBD  1N5712UBD  1N5711UBCA  1N5711UBCC  1N5712UBCA  1N5712UBCC 

Microsemi
Microsemi Corporation

SCHOTTKY BARRIER DIODES LEADLESS PACKAGE FOR SURFACE MOUNT
Qualified per MIL-PRF-19500/444

 

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1N5711 [Schottky Diodes ]

other parts : 1N6263 

GE
General Semiconductor

Features
• For general purpose applications
• Metal-on-silicon Schottky barrier device which is
   protected by a PN junction guard ring. The low for
   ward voltage drop and fast switching make it ideal
   for protection of MOS devices, steering, biasing
   and coupling diodes for fast switching and low
   logic level applications.
• This diode is also available in the MiniMELF case
   with type designation LL5711 and LL6263.

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1N5711 [Schottky Barrier Diodes for General Purpose Applications ]

other parts : 1N5712  5082-2300  5082-2303  5082-2800  5082-2810  5082-2811  5082-2835  5082-2900 

NJSEMI
New Jersey Semiconductor

Description/Applications
The 1N5711, 1N5712, 5082-2800/10/11 are passivated Schottky barrier diodes which use a patented “guard ring” design to achieve a high breakdown voltage. Packaged in a low cost glass package, they are well suited for high level detecting, mixing, switching, gating, log or A-D converting, video detecting, frequency discriminating, sampling, and wave shaping.

Features
• Low Turn-On Voltage
   As Low as 0.34 V at 1 mA
• Pico Second Switching Speed
• High Breakdown Voltage
   Up to 70 V
• Matched Characteristics Available

View
1N5711 [General Purpose Axial Lead Glass Packaged Schottky Diodes ]

other parts : 1N5712  MADS-005711  MADS-005712  MADS-005711-0054MT  MADS-005712-0054MT 

MA-COM
M/A-COM Technology Solutions, Inc.

Description and Applications
These silicon diodes are packaged in a hermetic axial lead glass package. Various uses include detecting, mixing and switching at low power levels. They are suitable for commercial switching along with control functions in narrow band receivers. These diodes can also be used in the UHF and VHF frequency bands for pulse shaping, sampling and as fast logic gates.

Features
● Low Reverse Leakage Current
● Low Forward Voltage Drop
● Pico second Switching Speed
● Offered in Tape and Reel Packaging
● RoHS* Compliant

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1N5711W_Rev4-2 [SURFACE MOUNT SCHOTTKY BARRIER DIODE ]

other parts : 1N5711W-7_Rev4-2 

Diodes
Diodes Incorporated.

Features
● Low Forward Voltage Drop
● Guard Ring Construction for Transient
   Protection
● Fast Switching Time
● Low Reverse Capacitance

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