Schottky Barrier Switching Diode

Features
● Fast Switching Speed
● High Reverse Breakdown Voltage
● Low Forward Voltage Drop
● For General Purpose Application

Features
• Moisture Sensitivity: Level 1 per J-STD-020C
• High Reverse Breakdown Voltage
• Low Forward Voltage Drop
• For General Purpose Application
• Marking : Cathode band and type number
• Lead Free Finish/Rohs Compliant (Note1) ("P"Suffix designates
   Compliant. See ordering information)

Description
The 1N5711, 1N5712, 5082-2800/10/11 are passivated Schottky barrier diodes which use a patented “guard ring” design to achieve a high breakdown voltage. Packaged in a low cost
glass package, they are well suited for high level detecting, mixing, switching, gating, log or A-D converting, video detecting, frequency discriminating, sampling, and wave shaping.

Features
• Low Turn-On Voltage As Low as 0.34 V at 1 mA
• Pico Second Switching Speed
• High Breakdown Voltage Up to 70 V
• Matched Characteristics Available

SCHOTTKY BARRIER DIODES

– LOW REVERSE LEAKAGE CHARACTERISTICS
– METALLURGICALLY BONDED
   Qualified per MIL-PRF-19500/444

* These devices are only available as Commercial Level Product.

SCHOTTKY BARRIER DIODES
LEADLESS PACKAGE FOR SURFACE MOUNT
Qualified per MIL-PRF-19500/444

SCHOTTKY BARRIER DIODES LEADLESS PACKAGE FOR SURFACE MOUNT
Qualified per MIL-PRF-19500/444

Features
• For general purpose applications
• Metal-on-silicon Schottky barrier device which is
   protected by a PN junction guard ring. The low for
   ward voltage drop and fast switching make it ideal
   for protection of MOS devices, steering, biasing
   and coupling diodes for fast switching and low
   logic level applications.
• This diode is also available in the MiniMELF case
   with type designation LL5711 and LL6263.

Description/Applications
The 1N5711, 1N5712, 5082-2800/10/11 are passivated Schottky barrier diodes which use a patented “guard ring” design to achieve a high breakdown voltage. Packaged in a low cost glass package, they are well suited for high level detecting, mixing, switching, gating, log or A-D converting, video detecting, frequency discriminating, sampling, and wave shaping.

Features
• Low Turn-On Voltage
   As Low as 0.34 V at 1 mA
• Pico Second Switching Speed
• High Breakdown Voltage
   Up to 70 V
• Matched Characteristics Available

Description and Applications
These silicon diodes are packaged in a hermetic axial lead glass package. Various uses include detecting, mixing and switching at low power levels. They are suitable for commercial switching along with control functions in narrow band receivers. These diodes can also be used in the UHF and VHF frequency bands for pulse shaping, sampling and as fast logic gates.

Features
● Low Reverse Leakage Current
● Low Forward Voltage Drop
● Pico second Switching Speed
● Offered in Tape and Reel Packaging
● RoHS* Compliant

Features
● Low Forward Voltage Drop
● Guard Ring Construction for Transient
   Protection
● Fast Switching Time
● Low Reverse Capacitance