Integrated circuits, Transistor, Semiconductors Free Datasheet Search and Download Site


AM29F100

  

Datasheet

Match, Like AM29F100 AM29F100B AM29F100T
Start with AM29F100-* AM29F100B* AM29F100T*
End N/A
Included N/A
View Details    
AM29F100 [1 Megabit (128 K x 8-bit/64 K x 16-bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory ]

other parts : AM29F100B  AM29F100B-120EC  AM29F100B-120ECB  AM29F100B-120EE  AM29F100B-120EEB  AM29F100B-120EI  AM29F100B-120EIB  AM29F100B-120FC  AM29F100B-120FCB  AM29F100B-120FE 

AMD
Advanced Micro Devices

GENERAL DESCRIPTION
The Am29F100 is a 1 Mbit, 5.0 Volt-only Flash memory organized as 131,072 bytes or 65,536 words. The Am29F100 is offered in 44-pin SO and 48-pin TSOP packages. Word-wide data appears on DQ0-DQ15; byte-wide data on DQ0-DQ7. The device is designed to be programmed in-system with the standard system 5.0 Volt VCC supply. A 12.0 volt VPP is not required for program or erase operations. The device can also be programmed or erased in standard EPROM programmers.

DISTINCTIVE CHARACTERISTICS
■ Single power supply operation
   — 5.0 V ± 10% for read, erase, and program operations
   — Simplifies system-level power requirements
■ High performance
   — 70 ns maximum access time
■ Low power consumption
   — 20 mA typical active read current for byte mode
   — 28 mA typical active read current for word mode
   — 30 mA typical program/erase current
   — 25 µA typical standby current
■ Flexible sector architecture
   — One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
      one 64 Kbyte sectors (byte mode)
   — One 8 Kword, two 4 Kword, one 16 Kword, and
      one 32 Kword sectors (word mode)
   — Any combination of sectors can be erased
   — Supports full chip erase
■ Top or bottom boot block configurations available
■ Sector protection
   — Hardware-based feature that disables/re-enables
      program and erase operations in any
      combination of sectors
   — Sector protection/unprotection can be
      implemented using standard PROM
      programming equipment
   — Temporary Sector Unprotect feature allows in
      system code changes in protected sectors
■ Embedded Algorithms
   — Embedded Erase algorithm automatically
      pre-programs and erases the chip or any
      combination of designated sector
   — Embedded Program algorithm automatically
      programs and verifies data at specified address
■ Minimum 100,000 program/erase cycles guaranteed
■ 20-year data retention at 125°C
   — Reliable operation for the life of the system
■ Package options
   — 44-pin SO
   — 48-pin TSOP (Continue ...)

View
AM29F100T [1 Megabit (128 K x 8-bit/64 K x 16-bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory ]

other parts : AM29F100  AM29F100B  AM29F100B-120EC  AM29F100B-120ECB  AM29F100B-120EE  AM29F100B-120EEB  AM29F100B-120EI  AM29F100B-120EIB  AM29F100B-120FC  AM29F100B-120FCB 

AMD
Advanced Micro Devices

GENERAL DESCRIPTION
The Am29F100 is a 1 Mbit, 5.0 Volt-only Flash memory organized as 131,072 bytes or 65,536 words. The Am29F100 is offered in 44-pin SO and 48-pin TSOP packages. Word-wide data appears on DQ0-DQ15; byte-wide data on DQ0-DQ7. The device is designed to be programmed in-system with the standard system 5.0 Volt VCC supply. A 12.0 volt VPP is not required for program or erase operations. The device can also be programmed or erased in standard EPROM programmers.

DISTINCTIVE CHARACTERISTICS
■ Single power supply operation
   — 5.0 V ± 10% for read, erase, and program operations
   — Simplifies system-level power requirements
■ High performance
   — 70 ns maximum access time
■ Low power consumption
   — 20 mA typical active read current for byte mode
   — 28 mA typical active read current for word mode
   — 30 mA typical program/erase current
   — 25 µA typical standby current
■ Flexible sector architecture
   — One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
      one 64 Kbyte sectors (byte mode)
   — One 8 Kword, two 4 Kword, one 16 Kword, and
      one 32 Kword sectors (word mode)
   — Any combination of sectors can be erased
   — Supports full chip erase
■ Top or bottom boot block configurations available
■ Sector protection
   — Hardware-based feature that disables/re-enables
      program and erase operations in any
      combination of sectors
   — Sector protection/unprotection can be
      implemented using standard PROM
      programming equipment
   — Temporary Sector Unprotect feature allows in
      system code changes in protected sectors
■ Embedded Algorithms
   — Embedded Erase algorithm automatically
      pre-programs and erases the chip or any
      combination of designated sector
   — Embedded Program algorithm automatically
      programs and verifies data at specified address
■ Minimum 100,000 program/erase cycles guaranteed
■ 20-year data retention at 125°C
   — Reliable operation for the life of the system
■ Package options
   — 44-pin SO
   — 48-pin TSOP (Continue ...)

View
AM29F100B [1 Megabit (128 K x 8-bit/64 K x 16-bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory ]

other parts : AM29F100  AM29F100B-120EC  AM29F100B-120ECB  AM29F100B-120EE  AM29F100B-120EEB  AM29F100B-120EI  AM29F100B-120EIB  AM29F100B-120FC  AM29F100B-120FCB  AM29F100B-120FE 

AMD
Advanced Micro Devices

GENERAL DESCRIPTION
The Am29F100 is a 1 Mbit, 5.0 Volt-only Flash memory organized as 131,072 bytes or 65,536 words. The Am29F100 is offered in 44-pin SO and 48-pin TSOP packages. Word-wide data appears on DQ0-DQ15; byte-wide data on DQ0-DQ7. The device is designed to be programmed in-system with the standard system 5.0 Volt VCC supply. A 12.0 volt VPP is not required for program or erase operations. The device can also be programmed or erased in standard EPROM programmers.

DISTINCTIVE CHARACTERISTICS
■ Single power supply operation
   — 5.0 V ± 10% for read, erase, and program operations
   — Simplifies system-level power requirements
■ High performance
   — 70 ns maximum access time
■ Low power consumption
   — 20 mA typical active read current for byte mode
   — 28 mA typical active read current for word mode
   — 30 mA typical program/erase current
   — 25 µA typical standby current
■ Flexible sector architecture
   — One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
      one 64 Kbyte sectors (byte mode)
   — One 8 Kword, two 4 Kword, one 16 Kword, and
      one 32 Kword sectors (word mode)
   — Any combination of sectors can be erased
   — Supports full chip erase
■ Top or bottom boot block configurations available
■ Sector protection
   — Hardware-based feature that disables/re-enables
      program and erase operations in any
      combination of sectors
   — Sector protection/unprotection can be
      implemented using standard PROM
      programming equipment
   — Temporary Sector Unprotect feature allows in
      system code changes in protected sectors
■ Embedded Algorithms
   — Embedded Erase algorithm automatically
      pre-programs and erases the chip or any
      combination of designated sector
   — Embedded Program algorithm automatically
      programs and verifies data at specified address
■ Minimum 100,000 program/erase cycles guaranteed
■ 20-year data retention at 125°C
   — Reliable operation for the life of the system
■ Package options
   — 44-pin SO
   — 48-pin TSOP (Continue ...)

View
AM29F100-1 [1 Megabit (128 K x 8-Bit/64 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory—Die Revision 1 ]

other parts : AM29F100B-120DGC  AM29F100B-120DGC1  AM29F100B-120DGE  AM29F100B-120DGE1  AM29F100B-120DGI  AM29F100B-120DGI1  AM29F100B-120DPC  AM29F100B-120DPC1  AM29F100B-120DPE  AM29F100B-120DPE1 

AMD
Advanced Micro Devices

GENERAL DESCRIPTION
The Am29F100 in Known Good Die (KGD) form is a 1 Mbit, 5.0 Volt-only Flash memory. AMD defines KGD as standard product in die form, tested for functionality and speed. AMD KGD products have the same reliability and quality as AMD products in packaged form.

DISTINCTIVE CHARACTERISTICS
■ Single power supply operation
   — 5.0 V ± 10% for read, erase, and program operations
   — Simplifies system-level power requirements
■ High performance
   — 120 ns maximum access time
■ Low power consumption
   — 20 mA typical active read current for byte mode
   — 28 mA typical active read current for word mode
   — 30 mA typical program/erase current
   — 25 µA typical standby current
■ Flexible sector architecture
   — One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
      one 64 Kbyte sectors (byte mode)
   — One 8 Kword, two 4 Kword, one 16 Kword, and
      one 32 Kword sectors (word mode)
   — Any combination of sectors can be erased
   — Supports full chip erase
■ Top or bottom boot block configurations available
■ Sector protection
   — Hardware-based feature that disables/reenables
      program and erase operations in any combination of sectors
   — Sector protection/unprotection can be
      implemented using standard PROM
      programming equipment
   — Temporary Sector Unprotect feature allows in
      system code changes in protected sectors
■ Embedded Algorithms
   — Embedded Erase algorithm automatically
      pre-programs and erases the chip or any
      combination of designated sector
   — Embedded Program algorithm automatically
      programs and verifies data at specified address
■ Minimum 100,000 program/erase cycles guaranteed
■ Compatible with JEDEC standards
   — Pinout and software compatible with
      single-power-supply flash
   — Superior inadvertent write protection
■ Data Polling and Toggle Bits
   — Provides a software method of detecting
      program or erase cycle completion
■ Ready/Busy pin (RY/BY#)
   — Provides a hardware method for detecting
      program or erase cycle completion
■ Erase Suspend/Erase Resume
   — Suspends an erase operation to read data from,
      or program data to, a sector that is not being
      erased, then resumes the erase operation
■ Hardware RESET# pin
   — Hardware method of resetting the device to
      reading array data
■ Tested to datasheet specifications at temperature
■ Quality and reliability levels equivalent to
   standard packaged components

View
AM29F100B-70 [1 Megabit (128 K x 8-bit/64 K x 16-bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory ]

other parts : AM29F100  AM29F100B  AM29F100B-120EC  AM29F100B-120ECB  AM29F100B-120EE  AM29F100B-120EEB  AM29F100B-120EI  AM29F100B-120EIB  AM29F100B-120FC  AM29F100B-120FCB 

AMD
Advanced Micro Devices

GENERAL DESCRIPTION
The Am29F100 is a 1 Mbit, 5.0 Volt-only Flash memory organized as 131,072 bytes or 65,536 words. The Am29F100 is offered in 44-pin SO and 48-pin TSOP packages. Word-wide data appears on DQ0-DQ15; byte-wide data on DQ0-DQ7. The device is designed to be programmed in-system with the standard system 5.0 Volt VCC supply. A 12.0 volt VPP is not required for program or erase operations. The device can also be programmed or erased in standard EPROM programmers.

DISTINCTIVE CHARACTERISTICS
■ Single power supply operation
   — 5.0 V ± 10% for read, erase, and program operations
   — Simplifies system-level power requirements
■ High performance
   — 70 ns maximum access time
■ Low power consumption
   — 20 mA typical active read current for byte mode
   — 28 mA typical active read current for word mode
   — 30 mA typical program/erase current
   — 25 µA typical standby current
■ Flexible sector architecture
   — One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
      one 64 Kbyte sectors (byte mode)
   — One 8 Kword, two 4 Kword, one 16 Kword, and
      one 32 Kword sectors (word mode)
   — Any combination of sectors can be erased
   — Supports full chip erase
■ Top or bottom boot block configurations available
■ Sector protection
   — Hardware-based feature that disables/re-enables
      program and erase operations in any
      combination of sectors
   — Sector protection/unprotection can be
      implemented using standard PROM
      programming equipment
   — Temporary Sector Unprotect feature allows in
      system code changes in protected sectors
■ Embedded Algorithms
   — Embedded Erase algorithm automatically
      pre-programs and erases the chip or any
      combination of designated sector
   — Embedded Program algorithm automatically
      programs and verifies data at specified address
■ Minimum 100,000 program/erase cycles guaranteed
■ 20-year data retention at 125°C
   — Reliable operation for the life of the system
■ Package options
   — 44-pin SO
   — 48-pin TSOP (Continue ...)

View
AM29F100T-90 [1 Megabit (128 K x 8-bit/64 K x 16-bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory ]

other parts : AM29F100  AM29F100B  AM29F100B-120EC  AM29F100B-120ECB  AM29F100B-120EE  AM29F100B-120EEB  AM29F100B-120EI  AM29F100B-120EIB  AM29F100B-120FC  AM29F100B-120FCB 

AMD
Advanced Micro Devices

GENERAL DESCRIPTION
The Am29F100 is a 1 Mbit, 5.0 Volt-only Flash memory organized as 131,072 bytes or 65,536 words. The Am29F100 is offered in 44-pin SO and 48-pin TSOP packages. Word-wide data appears on DQ0-DQ15; byte-wide data on DQ0-DQ7. The device is designed to be programmed in-system with the standard system 5.0 Volt VCC supply. A 12.0 volt VPP is not required for program or erase operations. The device can also be programmed or erased in standard EPROM programmers.

DISTINCTIVE CHARACTERISTICS
■ Single power supply operation
   — 5.0 V ± 10% for read, erase, and program operations
   — Simplifies system-level power requirements
■ High performance
   — 70 ns maximum access time
■ Low power consumption
   — 20 mA typical active read current for byte mode
   — 28 mA typical active read current for word mode
   — 30 mA typical program/erase current
   — 25 µA typical standby current
■ Flexible sector architecture
   — One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
      one 64 Kbyte sectors (byte mode)
   — One 8 Kword, two 4 Kword, one 16 Kword, and
      one 32 Kword sectors (word mode)
   — Any combination of sectors can be erased
   — Supports full chip erase
■ Top or bottom boot block configurations available
■ Sector protection
   — Hardware-based feature that disables/re-enables
      program and erase operations in any
      combination of sectors
   — Sector protection/unprotection can be
      implemented using standard PROM
      programming equipment
   — Temporary Sector Unprotect feature allows in
      system code changes in protected sectors
■ Embedded Algorithms
   — Embedded Erase algorithm automatically
      pre-programs and erases the chip or any
      combination of designated sector
   — Embedded Program algorithm automatically
      programs and verifies data at specified address
■ Minimum 100,000 program/erase cycles guaranteed
■ 20-year data retention at 125°C
   — Reliable operation for the life of the system
■ Package options
   — 44-pin SO
   — 48-pin TSOP (Continue ...)

View
AM29F100B-90 [1 Megabit (128 K x 8-bit/64 K x 16-bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory ]

other parts : AM29F100  AM29F100B  AM29F100B-120EC  AM29F100B-120ECB  AM29F100B-120EE  AM29F100B-120EEB  AM29F100B-120EI  AM29F100B-120EIB  AM29F100B-120FC  AM29F100B-120FCB 

AMD
Advanced Micro Devices

GENERAL DESCRIPTION
The Am29F100 is a 1 Mbit, 5.0 Volt-only Flash memory organized as 131,072 bytes or 65,536 words. The Am29F100 is offered in 44-pin SO and 48-pin TSOP packages. Word-wide data appears on DQ0-DQ15; byte-wide data on DQ0-DQ7. The device is designed to be programmed in-system with the standard system 5.0 Volt VCC supply. A 12.0 volt VPP is not required for program or erase operations. The device can also be programmed or erased in standard EPROM programmers.

DISTINCTIVE CHARACTERISTICS
■ Single power supply operation
   — 5.0 V ± 10% for read, erase, and program operations
   — Simplifies system-level power requirements
■ High performance
   — 70 ns maximum access time
■ Low power consumption
   — 20 mA typical active read current for byte mode
   — 28 mA typical active read current for word mode
   — 30 mA typical program/erase current
   — 25 µA typical standby current
■ Flexible sector architecture
   — One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
      one 64 Kbyte sectors (byte mode)
   — One 8 Kword, two 4 Kword, one 16 Kword, and
      one 32 Kword sectors (word mode)
   — Any combination of sectors can be erased
   — Supports full chip erase
■ Top or bottom boot block configurations available
■ Sector protection
   — Hardware-based feature that disables/re-enables
      program and erase operations in any
      combination of sectors
   — Sector protection/unprotection can be
      implemented using standard PROM
      programming equipment
   — Temporary Sector Unprotect feature allows in
      system code changes in protected sectors
■ Embedded Algorithms
   — Embedded Erase algorithm automatically
      pre-programs and erases the chip or any
      combination of designated sector
   — Embedded Program algorithm automatically
      programs and verifies data at specified address
■ Minimum 100,000 program/erase cycles guaranteed
■ 20-year data retention at 125°C
   — Reliable operation for the life of the system
■ Package options
   — 44-pin SO
   — 48-pin TSOP (Continue ...)

View
AM29F100T-70 [1 Megabit (128 K x 8-bit/64 K x 16-bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory ]

other parts : AM29F100  AM29F100B  AM29F100B-120EC  AM29F100B-120ECB  AM29F100B-120EE  AM29F100B-120EEB  AM29F100B-120EI  AM29F100B-120EIB  AM29F100B-120FC  AM29F100B-120FCB 

AMD
Advanced Micro Devices

GENERAL DESCRIPTION
The Am29F100 is a 1 Mbit, 5.0 Volt-only Flash memory organized as 131,072 bytes or 65,536 words. The Am29F100 is offered in 44-pin SO and 48-pin TSOP packages. Word-wide data appears on DQ0-DQ15; byte-wide data on DQ0-DQ7. The device is designed to be programmed in-system with the standard system 5.0 Volt VCC supply. A 12.0 volt VPP is not required for program or erase operations. The device can also be programmed or erased in standard EPROM programmers.

DISTINCTIVE CHARACTERISTICS
■ Single power supply operation
   — 5.0 V ± 10% for read, erase, and program operations
   — Simplifies system-level power requirements
■ High performance
   — 70 ns maximum access time
■ Low power consumption
   — 20 mA typical active read current for byte mode
   — 28 mA typical active read current for word mode
   — 30 mA typical program/erase current
   — 25 µA typical standby current
■ Flexible sector architecture
   — One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
      one 64 Kbyte sectors (byte mode)
   — One 8 Kword, two 4 Kword, one 16 Kword, and
      one 32 Kword sectors (word mode)
   — Any combination of sectors can be erased
   — Supports full chip erase
■ Top or bottom boot block configurations available
■ Sector protection
   — Hardware-based feature that disables/re-enables
      program and erase operations in any
      combination of sectors
   — Sector protection/unprotection can be
      implemented using standard PROM
      programming equipment
   — Temporary Sector Unprotect feature allows in
      system code changes in protected sectors
■ Embedded Algorithms
   — Embedded Erase algorithm automatically
      pre-programs and erases the chip or any
      combination of designated sector
   — Embedded Program algorithm automatically
      programs and verifies data at specified address
■ Minimum 100,000 program/erase cycles guaranteed
■ 20-year data retention at 125°C
   — Reliable operation for the life of the system
■ Package options
   — 44-pin SO
   — 48-pin TSOP (Continue ...)

View
AM29F100T-120 [1 Megabit (128 K x 8-bit/64 K x 16-bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory ]

other parts : AM29F100  AM29F100B  AM29F100B-120EC  AM29F100B-120ECB  AM29F100B-120EE  AM29F100B-120EEB  AM29F100B-120EI  AM29F100B-120EIB  AM29F100B-120FC  AM29F100B-120FCB 

AMD
Advanced Micro Devices

GENERAL DESCRIPTION
The Am29F100 is a 1 Mbit, 5.0 Volt-only Flash memory organized as 131,072 bytes or 65,536 words. The Am29F100 is offered in 44-pin SO and 48-pin TSOP packages. Word-wide data appears on DQ0-DQ15; byte-wide data on DQ0-DQ7. The device is designed to be programmed in-system with the standard system 5.0 Volt VCC supply. A 12.0 volt VPP is not required for program or erase operations. The device can also be programmed or erased in standard EPROM programmers.

DISTINCTIVE CHARACTERISTICS
■ Single power supply operation
   — 5.0 V ± 10% for read, erase, and program operations
   — Simplifies system-level power requirements
■ High performance
   — 70 ns maximum access time
■ Low power consumption
   — 20 mA typical active read current for byte mode
   — 28 mA typical active read current for word mode
   — 30 mA typical program/erase current
   — 25 µA typical standby current
■ Flexible sector architecture
   — One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
      one 64 Kbyte sectors (byte mode)
   — One 8 Kword, two 4 Kword, one 16 Kword, and
      one 32 Kword sectors (word mode)
   — Any combination of sectors can be erased
   — Supports full chip erase
■ Top or bottom boot block configurations available
■ Sector protection
   — Hardware-based feature that disables/re-enables
      program and erase operations in any
      combination of sectors
   — Sector protection/unprotection can be
      implemented using standard PROM
      programming equipment
   — Temporary Sector Unprotect feature allows in
      system code changes in protected sectors
■ Embedded Algorithms
   — Embedded Erase algorithm automatically
      pre-programs and erases the chip or any
      combination of designated sector
   — Embedded Program algorithm automatically
      programs and verifies data at specified address
■ Minimum 100,000 program/erase cycles guaranteed
■ 20-year data retention at 125°C
   — Reliable operation for the life of the system
■ Package options
   — 44-pin SO
   — 48-pin TSOP (Continue ...)

View
AM29F100B-120 [1 Megabit (128 K x 8-bit/64 K x 16-bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory ]

other parts : AM29F100  AM29F100B  AM29F100B-120EC  AM29F100B-120ECB  AM29F100B-120EE  AM29F100B-120EEB  AM29F100B-120EI  AM29F100B-120EIB  AM29F100B-120FC  AM29F100B-120FCB 

AMD
Advanced Micro Devices

GENERAL DESCRIPTION
The Am29F100 is a 1 Mbit, 5.0 Volt-only Flash memory organized as 131,072 bytes or 65,536 words. The Am29F100 is offered in 44-pin SO and 48-pin TSOP packages. Word-wide data appears on DQ0-DQ15; byte-wide data on DQ0-DQ7. The device is designed to be programmed in-system with the standard system 5.0 Volt VCC supply. A 12.0 volt VPP is not required for program or erase operations. The device can also be programmed or erased in standard EPROM programmers.

DISTINCTIVE CHARACTERISTICS
■ Single power supply operation
   — 5.0 V ± 10% for read, erase, and program operations
   — Simplifies system-level power requirements
■ High performance
   — 70 ns maximum access time
■ Low power consumption
   — 20 mA typical active read current for byte mode
   — 28 mA typical active read current for word mode
   — 30 mA typical program/erase current
   — 25 µA typical standby current
■ Flexible sector architecture
   — One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
      one 64 Kbyte sectors (byte mode)
   — One 8 Kword, two 4 Kword, one 16 Kword, and
      one 32 Kword sectors (word mode)
   — Any combination of sectors can be erased
   — Supports full chip erase
■ Top or bottom boot block configurations available
■ Sector protection
   — Hardware-based feature that disables/re-enables
      program and erase operations in any
      combination of sectors
   — Sector protection/unprotection can be
      implemented using standard PROM
      programming equipment
   — Temporary Sector Unprotect feature allows in
      system code changes in protected sectors
■ Embedded Algorithms
   — Embedded Erase algorithm automatically
      pre-programs and erases the chip or any
      combination of designated sector
   — Embedded Program algorithm automatically
      programs and verifies data at specified address
■ Minimum 100,000 program/erase cycles guaranteed
■ 20-year data retention at 125°C
   — Reliable operation for the life of the system
■ Package options
   — 44-pin SO
   — 48-pin TSOP (Continue ...)

View
1 2 3 4 5 6 7 8 9 10 Next
Share Link : 

HOME




Language : 한국어     日本語     русский     简体中文     español
@ 2015 - 2018  [ Home ][ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]