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AM29F100

  

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AM29F100T-75EC [1 Megabit (131,072 x 8-Bit/65,536 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory ]

other parts : AM29F100B-75EC  AM29F100T-75EI  AM29F100B-75FI  AM29F100B-75SE  AM29F100B-75FC  AM29F100B-75FE  AM29F100B-75EE  AM29F100B-75SI  AM29F100B-75EI  AM29F100B-75SC 

AMD
Advanced Micro Devices

GENERAL DESCRIPTION
The Am29F100 is a 1 Mbit, 5.0 Volt-only Flash memory organized as 128 Kbytes of 8 bits each or 64 words of 16 bits each. The 1 Mbit of data is divided into 5 sectors of one 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and one 64 Kbytes, for flexible erase capability. The 8 bits of data will appear on DQ0–DQ7 or 16 bits on DQ0–DQ15. The Am29F100 is offered in 44-pin SO and 48-pin TSOP packages. This device is designed to be programmed in-system with the standard system 5.0 Volt VCC supply. 12.0 Volt VPP is not required for program or erase operations. The device can also be reprogrammed in standard EPROM programmers.

DISTINCTIVE CHARACTERISTICS
■ 5.0 V ± 10% for read and write operations
   — Minimizes system level power requirements
■ Compatible with JEDEC-standards
   — Pinout and software compatible with
      single-power-supply flash
   — Superior inadvertent write protection
■ Package options
   — 44-pin SO
   — 48-pin TSOP
■ Minimum 100,000 write/erase cycles guaranteed
■ High performance
   — 70 ns maximum access time
■ Sector erase architecture
   — One 16 Kbyte, two 8 Kbytes, one 32 Kbyte,
      and one 64 Kbytes
   — Any combination of sectors can be erased. Also
      supports full chip erase.
■ Sector protection
   — Hardware method that disables any combination
      of sectors from write or erase operations.
      Implemented using standard PROM programming equipment.
■ Embedded Erase Algorithms
   — Automatically pre-programs and erases the
      chip or any sector
■ Embedded Program Algorithms
   — Automatically programs and verifies data at
      specified address
■ Data Polling and Toggle Bit feature for detection of program
   or erase cycle completion
■ Ready/Busy output (RY/BY)
   — Hardware method for detection of program or erase cycle completion
■ Erase Suspend/Resume
   — Supports reading data from a sector not being erased
■ Low power consumption
   — 20 mA typical active read current for Byte Mode
   — 28 mA typical active read current for Word Mode
   — 30 mA typical program/erase current
■ Enhanced power management for standby mode
   — 25 µA typical standby current
■ Boot Code Sector Architecture
   — T = Top sector
   — B = Bottom sector
■ Hardware RESET pin
   — Resets internal state machine to the read mode

View
AM29F100T-75EE [1 Megabit (131,072 x 8-Bit/65,536 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory ]

other parts : AM29F100B-75EC  AM29F100T-75EC  AM29F100B-75FI  AM29F100B-75SE  AM29F100B-75FC  AM29F100B-75FE  AM29F100B-75EE  AM29F100B-75SI  AM29F100B-75EI  AM29F100B-75SC 

AMD
Advanced Micro Devices

GENERAL DESCRIPTION
The Am29F100 is a 1 Mbit, 5.0 Volt-only Flash memory organized as 128 Kbytes of 8 bits each or 64 words of 16 bits each. The 1 Mbit of data is divided into 5 sectors of one 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and one 64 Kbytes, for flexible erase capability. The 8 bits of data will appear on DQ0–DQ7 or 16 bits on DQ0–DQ15. The Am29F100 is offered in 44-pin SO and 48-pin TSOP packages. This device is designed to be programmed in-system with the standard system 5.0 Volt VCC supply. 12.0 Volt VPP is not required for program or erase operations. The device can also be reprogrammed in standard EPROM programmers.

DISTINCTIVE CHARACTERISTICS
■ 5.0 V ± 10% for read and write operations
   — Minimizes system level power requirements
■ Compatible with JEDEC-standards
   — Pinout and software compatible with
      single-power-supply flash
   — Superior inadvertent write protection
■ Package options
   — 44-pin SO
   — 48-pin TSOP
■ Minimum 100,000 write/erase cycles guaranteed
■ High performance
   — 70 ns maximum access time
■ Sector erase architecture
   — One 16 Kbyte, two 8 Kbytes, one 32 Kbyte,
      and one 64 Kbytes
   — Any combination of sectors can be erased. Also
      supports full chip erase.
■ Sector protection
   — Hardware method that disables any combination
      of sectors from write or erase operations.
      Implemented using standard PROM programming equipment.
■ Embedded Erase Algorithms
   — Automatically pre-programs and erases the
      chip or any sector
■ Embedded Program Algorithms
   — Automatically programs and verifies data at
      specified address
■ Data Polling and Toggle Bit feature for detection of program
   or erase cycle completion
■ Ready/Busy output (RY/BY)
   — Hardware method for detection of program or erase cycle completion
■ Erase Suspend/Resume
   — Supports reading data from a sector not being erased
■ Low power consumption
   — 20 mA typical active read current for Byte Mode
   — 28 mA typical active read current for Word Mode
   — 30 mA typical program/erase current
■ Enhanced power management for standby mode
   — 25 µA typical standby current
■ Boot Code Sector Architecture
   — T = Top sector
   — B = Bottom sector
■ Hardware RESET pin
   — Resets internal state machine to the read mode

View
AM29F100T-75EI [1 Megabit (131,072 x 8-Bit/65,536 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory ]

other parts : AM29F100B-75EC  AM29F100T-75EC  AM29F100B-75FI  AM29F100B-75SE  AM29F100B-75FC  AM29F100B-75FE  AM29F100B-75EE  AM29F100B-75SI  AM29F100B-75EI  AM29F100B-75SC 

AMD
Advanced Micro Devices

GENERAL DESCRIPTION
The Am29F100 is a 1 Mbit, 5.0 Volt-only Flash memory organized as 128 Kbytes of 8 bits each or 64 words of 16 bits each. The 1 Mbit of data is divided into 5 sectors of one 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and one 64 Kbytes, for flexible erase capability. The 8 bits of data will appear on DQ0–DQ7 or 16 bits on DQ0–DQ15. The Am29F100 is offered in 44-pin SO and 48-pin TSOP packages. This device is designed to be programmed in-system with the standard system 5.0 Volt VCC supply. 12.0 Volt VPP is not required for program or erase operations. The device can also be reprogrammed in standard EPROM programmers.

DISTINCTIVE CHARACTERISTICS
■ 5.0 V ± 10% for read and write operations
   — Minimizes system level power requirements
■ Compatible with JEDEC-standards
   — Pinout and software compatible with
      single-power-supply flash
   — Superior inadvertent write protection
■ Package options
   — 44-pin SO
   — 48-pin TSOP
■ Minimum 100,000 write/erase cycles guaranteed
■ High performance
   — 70 ns maximum access time
■ Sector erase architecture
   — One 16 Kbyte, two 8 Kbytes, one 32 Kbyte,
      and one 64 Kbytes
   — Any combination of sectors can be erased. Also
      supports full chip erase.
■ Sector protection
   — Hardware method that disables any combination
      of sectors from write or erase operations.
      Implemented using standard PROM programming equipment.
■ Embedded Erase Algorithms
   — Automatically pre-programs and erases the
      chip or any sector
■ Embedded Program Algorithms
   — Automatically programs and verifies data at
      specified address
■ Data Polling and Toggle Bit feature for detection of program
   or erase cycle completion
■ Ready/Busy output (RY/BY)
   — Hardware method for detection of program or erase cycle completion
■ Erase Suspend/Resume
   — Supports reading data from a sector not being erased
■ Low power consumption
   — 20 mA typical active read current for Byte Mode
   — 28 mA typical active read current for Word Mode
   — 30 mA typical program/erase current
■ Enhanced power management for standby mode
   — 25 µA typical standby current
■ Boot Code Sector Architecture
   — T = Top sector
   — B = Bottom sector
■ Hardware RESET pin
   — Resets internal state machine to the read mode

View
AM29F100T-75FC [1 Megabit (131,072 x 8-Bit/65,536 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory ]

other parts : AM29F100B-75EC  AM29F100T-75EC  AM29F100B-75FI  AM29F100B-75SE  AM29F100B-75FC  AM29F100B-75FE  AM29F100B-75EE  AM29F100B-75SI  AM29F100B-75EI  AM29F100B-75SC 

AMD
Advanced Micro Devices

GENERAL DESCRIPTION
The Am29F100 is a 1 Mbit, 5.0 Volt-only Flash memory organized as 128 Kbytes of 8 bits each or 64 words of 16 bits each. The 1 Mbit of data is divided into 5 sectors of one 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and one 64 Kbytes, for flexible erase capability. The 8 bits of data will appear on DQ0–DQ7 or 16 bits on DQ0–DQ15. The Am29F100 is offered in 44-pin SO and 48-pin TSOP packages. This device is designed to be programmed in-system with the standard system 5.0 Volt VCC supply. 12.0 Volt VPP is not required for program or erase operations. The device can also be reprogrammed in standard EPROM programmers.

DISTINCTIVE CHARACTERISTICS
■ 5.0 V ± 10% for read and write operations
   — Minimizes system level power requirements
■ Compatible with JEDEC-standards
   — Pinout and software compatible with
      single-power-supply flash
   — Superior inadvertent write protection
■ Package options
   — 44-pin SO
   — 48-pin TSOP
■ Minimum 100,000 write/erase cycles guaranteed
■ High performance
   — 70 ns maximum access time
■ Sector erase architecture
   — One 16 Kbyte, two 8 Kbytes, one 32 Kbyte,
      and one 64 Kbytes
   — Any combination of sectors can be erased. Also
      supports full chip erase.
■ Sector protection
   — Hardware method that disables any combination
      of sectors from write or erase operations.
      Implemented using standard PROM programming equipment.
■ Embedded Erase Algorithms
   — Automatically pre-programs and erases the
      chip or any sector
■ Embedded Program Algorithms
   — Automatically programs and verifies data at
      specified address
■ Data Polling and Toggle Bit feature for detection of program
   or erase cycle completion
■ Ready/Busy output (RY/BY)
   — Hardware method for detection of program or erase cycle completion
■ Erase Suspend/Resume
   — Supports reading data from a sector not being erased
■ Low power consumption
   — 20 mA typical active read current for Byte Mode
   — 28 mA typical active read current for Word Mode
   — 30 mA typical program/erase current
■ Enhanced power management for standby mode
   — 25 µA typical standby current
■ Boot Code Sector Architecture
   — T = Top sector
   — B = Bottom sector
■ Hardware RESET pin
   — Resets internal state machine to the read mode

View
AM29F100T-75FE [1 Megabit (131,072 x 8-Bit/65,536 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory ]

other parts : AM29F100B-75EC  AM29F100T-75EC  AM29F100B-75FI  AM29F100B-75SE  AM29F100B-75FC  AM29F100B-75FE  AM29F100B-75EE  AM29F100B-75SI  AM29F100B-75EI  AM29F100B-75SC 

AMD
Advanced Micro Devices

GENERAL DESCRIPTION
The Am29F100 is a 1 Mbit, 5.0 Volt-only Flash memory organized as 128 Kbytes of 8 bits each or 64 words of 16 bits each. The 1 Mbit of data is divided into 5 sectors of one 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and one 64 Kbytes, for flexible erase capability. The 8 bits of data will appear on DQ0–DQ7 or 16 bits on DQ0–DQ15. The Am29F100 is offered in 44-pin SO and 48-pin TSOP packages. This device is designed to be programmed in-system with the standard system 5.0 Volt VCC supply. 12.0 Volt VPP is not required for program or erase operations. The device can also be reprogrammed in standard EPROM programmers.

DISTINCTIVE CHARACTERISTICS
■ 5.0 V ± 10% for read and write operations
   — Minimizes system level power requirements
■ Compatible with JEDEC-standards
   — Pinout and software compatible with
      single-power-supply flash
   — Superior inadvertent write protection
■ Package options
   — 44-pin SO
   — 48-pin TSOP
■ Minimum 100,000 write/erase cycles guaranteed
■ High performance
   — 70 ns maximum access time
■ Sector erase architecture
   — One 16 Kbyte, two 8 Kbytes, one 32 Kbyte,
      and one 64 Kbytes
   — Any combination of sectors can be erased. Also
      supports full chip erase.
■ Sector protection
   — Hardware method that disables any combination
      of sectors from write or erase operations.
      Implemented using standard PROM programming equipment.
■ Embedded Erase Algorithms
   — Automatically pre-programs and erases the
      chip or any sector
■ Embedded Program Algorithms
   — Automatically programs and verifies data at
      specified address
■ Data Polling and Toggle Bit feature for detection of program
   or erase cycle completion
■ Ready/Busy output (RY/BY)
   — Hardware method for detection of program or erase cycle completion
■ Erase Suspend/Resume
   — Supports reading data from a sector not being erased
■ Low power consumption
   — 20 mA typical active read current for Byte Mode
   — 28 mA typical active read current for Word Mode
   — 30 mA typical program/erase current
■ Enhanced power management for standby mode
   — 25 µA typical standby current
■ Boot Code Sector Architecture
   — T = Top sector
   — B = Bottom sector
■ Hardware RESET pin
   — Resets internal state machine to the read mode

View
AM29F100B-75EC [1 Megabit (131,072 x 8-Bit/65,536 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory ]

other parts : AM29F100B-75SC  AM29F100B-75FE  AM29F100B-75SE  AM29F100B-75FI  AM29F100B-75FC  AM29F100B-75SI  AM29F100B-75EE  AM29F100T-75EI  AM29F100B-75EI  AM29F100T-75EC 

AMD
Advanced Micro Devices

GENERAL DESCRIPTION
The Am29F100 is a 1 Mbit, 5.0 Volt-only Flash memory organized as 128 Kbytes of 8 bits each or 64 words of 16 bits each. The 1 Mbit of data is divided into 5 sectors of one 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and one 64 Kbytes, for flexible erase capability. The 8 bits of data will appear on DQ0–DQ7 or 16 bits on DQ0–DQ15. The Am29F100 is offered in 44-pin SO and 48-pin TSOP packages. This device is designed to be programmed in-system with the standard system 5.0 Volt VCC supply. 12.0 Volt VPP is not required for program or erase operations. The device can also be reprogrammed in standard EPROM programmers.

DISTINCTIVE CHARACTERISTICS
■ 5.0 V ± 10% for read and write operations
   — Minimizes system level power requirements
■ Compatible with JEDEC-standards
   — Pinout and software compatible with
      single-power-supply flash
   — Superior inadvertent write protection
■ Package options
   — 44-pin SO
   — 48-pin TSOP
■ Minimum 100,000 write/erase cycles guaranteed
■ High performance
   — 70 ns maximum access time
■ Sector erase architecture
   — One 16 Kbyte, two 8 Kbytes, one 32 Kbyte,
      and one 64 Kbytes
   — Any combination of sectors can be erased. Also
      supports full chip erase.
■ Sector protection
   — Hardware method that disables any combination
      of sectors from write or erase operations.
      Implemented using standard PROM programming equipment.
■ Embedded Erase Algorithms
   — Automatically pre-programs and erases the
      chip or any sector
■ Embedded Program Algorithms
   — Automatically programs and verifies data at
      specified address
■ Data Polling and Toggle Bit feature for detection of program
   or erase cycle completion
■ Ready/Busy output (RY/BY)
   — Hardware method for detection of program or erase cycle completion
■ Erase Suspend/Resume
   — Supports reading data from a sector not being erased
■ Low power consumption
   — 20 mA typical active read current for Byte Mode
   — 28 mA typical active read current for Word Mode
   — 30 mA typical program/erase current
■ Enhanced power management for standby mode
   — 25 µA typical standby current
■ Boot Code Sector Architecture
   — T = Top sector
   — B = Bottom sector
■ Hardware RESET pin
   — Resets internal state machine to the read mode

View
AM29F100T-75FI [1 Megabit (131,072 x 8-Bit/65,536 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory ]

other parts : AM29F100B-75EC  AM29F100T-75EC  AM29F100B-75FI  AM29F100B-75SE  AM29F100B-75FC  AM29F100B-75FE  AM29F100B-75EE  AM29F100B-75SI  AM29F100B-75EI  AM29F100B-75SC 

AMD
Advanced Micro Devices

GENERAL DESCRIPTION
The Am29F100 is a 1 Mbit, 5.0 Volt-only Flash memory organized as 128 Kbytes of 8 bits each or 64 words of 16 bits each. The 1 Mbit of data is divided into 5 sectors of one 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and one 64 Kbytes, for flexible erase capability. The 8 bits of data will appear on DQ0–DQ7 or 16 bits on DQ0–DQ15. The Am29F100 is offered in 44-pin SO and 48-pin TSOP packages. This device is designed to be programmed in-system with the standard system 5.0 Volt VCC supply. 12.0 Volt VPP is not required for program or erase operations. The device can also be reprogrammed in standard EPROM programmers.

DISTINCTIVE CHARACTERISTICS
■ 5.0 V ± 10% for read and write operations
   — Minimizes system level power requirements
■ Compatible with JEDEC-standards
   — Pinout and software compatible with
      single-power-supply flash
   — Superior inadvertent write protection
■ Package options
   — 44-pin SO
   — 48-pin TSOP
■ Minimum 100,000 write/erase cycles guaranteed
■ High performance
   — 70 ns maximum access time
■ Sector erase architecture
   — One 16 Kbyte, two 8 Kbytes, one 32 Kbyte,
      and one 64 Kbytes
   — Any combination of sectors can be erased. Also
      supports full chip erase.
■ Sector protection
   — Hardware method that disables any combination
      of sectors from write or erase operations.
      Implemented using standard PROM programming equipment.
■ Embedded Erase Algorithms
   — Automatically pre-programs and erases the
      chip or any sector
■ Embedded Program Algorithms
   — Automatically programs and verifies data at
      specified address
■ Data Polling and Toggle Bit feature for detection of program
   or erase cycle completion
■ Ready/Busy output (RY/BY)
   — Hardware method for detection of program or erase cycle completion
■ Erase Suspend/Resume
   — Supports reading data from a sector not being erased
■ Low power consumption
   — 20 mA typical active read current for Byte Mode
   — 28 mA typical active read current for Word Mode
   — 30 mA typical program/erase current
■ Enhanced power management for standby mode
   — 25 µA typical standby current
■ Boot Code Sector Architecture
   — T = Top sector
   — B = Bottom sector
■ Hardware RESET pin
   — Resets internal state machine to the read mode

View
AM29F100B-75EE [1 Megabit (131,072 x 8-Bit/65,536 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory ]

other parts : AM29F100B-75EC  AM29F100B-75FE  AM29F100B-75SE  AM29F100B-75FI  AM29F100B-75FC  AM29F100T-75EC  AM29F100B-75SI  AM29F100B-75EI  AM29F100B-75SC  AM29F100T-75EI 

AMD
Advanced Micro Devices

GENERAL DESCRIPTION
The Am29F100 is a 1 Mbit, 5.0 Volt-only Flash memory organized as 128 Kbytes of 8 bits each or 64 words of 16 bits each. The 1 Mbit of data is divided into 5 sectors of one 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and one 64 Kbytes, for flexible erase capability. The 8 bits of data will appear on DQ0–DQ7 or 16 bits on DQ0–DQ15. The Am29F100 is offered in 44-pin SO and 48-pin TSOP packages. This device is designed to be programmed in-system with the standard system 5.0 Volt VCC supply. 12.0 Volt VPP is not required for program or erase operations. The device can also be reprogrammed in standard EPROM programmers.

DISTINCTIVE CHARACTERISTICS
■ 5.0 V ± 10% for read and write operations
   — Minimizes system level power requirements
■ Compatible with JEDEC-standards
   — Pinout and software compatible with
      single-power-supply flash
   — Superior inadvertent write protection
■ Package options
   — 44-pin SO
   — 48-pin TSOP
■ Minimum 100,000 write/erase cycles guaranteed
■ High performance
   — 70 ns maximum access time
■ Sector erase architecture
   — One 16 Kbyte, two 8 Kbytes, one 32 Kbyte,
      and one 64 Kbytes
   — Any combination of sectors can be erased. Also
      supports full chip erase.
■ Sector protection
   — Hardware method that disables any combination
      of sectors from write or erase operations.
      Implemented using standard PROM programming equipment.
■ Embedded Erase Algorithms
   — Automatically pre-programs and erases the
      chip or any sector
■ Embedded Program Algorithms
   — Automatically programs and verifies data at
      specified address
■ Data Polling and Toggle Bit feature for detection of program
   or erase cycle completion
■ Ready/Busy output (RY/BY)
   — Hardware method for detection of program or erase cycle completion
■ Erase Suspend/Resume
   — Supports reading data from a sector not being erased
■ Low power consumption
   — 20 mA typical active read current for Byte Mode
   — 28 mA typical active read current for Word Mode
   — 30 mA typical program/erase current
■ Enhanced power management for standby mode
   — 25 µA typical standby current
■ Boot Code Sector Architecture
   — T = Top sector
   — B = Bottom sector
■ Hardware RESET pin
   — Resets internal state machine to the read mode

View
AM29F100T-75SC [1 Megabit (131,072 x 8-Bit/65,536 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory ]

other parts : AM29F100B-75EC  AM29F100T-75EC  AM29F100B-75FI  AM29F100B-75SE  AM29F100B-75FC  AM29F100B-75FE  AM29F100B-75EE  AM29F100B-75SI  AM29F100B-75EI  AM29F100B-75SC 

AMD
Advanced Micro Devices

GENERAL DESCRIPTION
The Am29F100 is a 1 Mbit, 5.0 Volt-only Flash memory organized as 128 Kbytes of 8 bits each or 64 words of 16 bits each. The 1 Mbit of data is divided into 5 sectors of one 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and one 64 Kbytes, for flexible erase capability. The 8 bits of data will appear on DQ0–DQ7 or 16 bits on DQ0–DQ15. The Am29F100 is offered in 44-pin SO and 48-pin TSOP packages. This device is designed to be programmed in-system with the standard system 5.0 Volt VCC supply. 12.0 Volt VPP is not required for program or erase operations. The device can also be reprogrammed in standard EPROM programmers.

DISTINCTIVE CHARACTERISTICS
■ 5.0 V ± 10% for read and write operations
   — Minimizes system level power requirements
■ Compatible with JEDEC-standards
   — Pinout and software compatible with
      single-power-supply flash
   — Superior inadvertent write protection
■ Package options
   — 44-pin SO
   — 48-pin TSOP
■ Minimum 100,000 write/erase cycles guaranteed
■ High performance
   — 70 ns maximum access time
■ Sector erase architecture
   — One 16 Kbyte, two 8 Kbytes, one 32 Kbyte,
      and one 64 Kbytes
   — Any combination of sectors can be erased. Also
      supports full chip erase.
■ Sector protection
   — Hardware method that disables any combination
      of sectors from write or erase operations.
      Implemented using standard PROM programming equipment.
■ Embedded Erase Algorithms
   — Automatically pre-programs and erases the
      chip or any sector
■ Embedded Program Algorithms
   — Automatically programs and verifies data at
      specified address
■ Data Polling and Toggle Bit feature for detection of program
   or erase cycle completion
■ Ready/Busy output (RY/BY)
   — Hardware method for detection of program or erase cycle completion
■ Erase Suspend/Resume
   — Supports reading data from a sector not being erased
■ Low power consumption
   — 20 mA typical active read current for Byte Mode
   — 28 mA typical active read current for Word Mode
   — 30 mA typical program/erase current
■ Enhanced power management for standby mode
   — 25 µA typical standby current
■ Boot Code Sector Architecture
   — T = Top sector
   — B = Bottom sector
■ Hardware RESET pin
   — Resets internal state machine to the read mode

View
AM29F100B-75EI [1 Megabit (131,072 x 8-Bit/65,536 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory ]

other parts : AM29F100B-75EC  AM29F100B-75FE  AM29F100B-75SE  AM29F100B-75FI  AM29F100B-75FC  AM29F100B-75SI  AM29F100B-75EE  AM29F100T-75EI  AM29F100B-75SC  AM29F100T-75EC 

AMD
Advanced Micro Devices

GENERAL DESCRIPTION
The Am29F100 is a 1 Mbit, 5.0 Volt-only Flash memory organized as 128 Kbytes of 8 bits each or 64 words of 16 bits each. The 1 Mbit of data is divided into 5 sectors of one 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and one 64 Kbytes, for flexible erase capability. The 8 bits of data will appear on DQ0–DQ7 or 16 bits on DQ0–DQ15. The Am29F100 is offered in 44-pin SO and 48-pin TSOP packages. This device is designed to be programmed in-system with the standard system 5.0 Volt VCC supply. 12.0 Volt VPP is not required for program or erase operations. The device can also be reprogrammed in standard EPROM programmers.

DISTINCTIVE CHARACTERISTICS
■ 5.0 V ± 10% for read and write operations
   — Minimizes system level power requirements
■ Compatible with JEDEC-standards
   — Pinout and software compatible with
      single-power-supply flash
   — Superior inadvertent write protection
■ Package options
   — 44-pin SO
   — 48-pin TSOP
■ Minimum 100,000 write/erase cycles guaranteed
■ High performance
   — 70 ns maximum access time
■ Sector erase architecture
   — One 16 Kbyte, two 8 Kbytes, one 32 Kbyte,
      and one 64 Kbytes
   — Any combination of sectors can be erased. Also
      supports full chip erase.
■ Sector protection
   — Hardware method that disables any combination
      of sectors from write or erase operations.
      Implemented using standard PROM programming equipment.
■ Embedded Erase Algorithms
   — Automatically pre-programs and erases the
      chip or any sector
■ Embedded Program Algorithms
   — Automatically programs and verifies data at
      specified address
■ Data Polling and Toggle Bit feature for detection of program
   or erase cycle completion
■ Ready/Busy output (RY/BY)
   — Hardware method for detection of program or erase cycle completion
■ Erase Suspend/Resume
   — Supports reading data from a sector not being erased
■ Low power consumption
   — 20 mA typical active read current for Byte Mode
   — 28 mA typical active read current for Word Mode
   — 30 mA typical program/erase current
■ Enhanced power management for standby mode
   — 25 µA typical standby current
■ Boot Code Sector Architecture
   — T = Top sector
   — B = Bottom sector
■ Hardware RESET pin
   — Resets internal state machine to the read mode

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