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BB301C

  

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BB301C [Built in Biasing Circuit MOS FET IC VHF RF Amplifier ]

other parts : BB301CAW-TL-E 

Renesas
Renesas Electronics

Features
• Built in Biasing Circuit;
   To reduce using parts cost & PC board space.
• Low noise characteristics;
   (NF = 1.3 dB typ. at f = 200 MHz)
• Withstanding to ESD;
   Built in ESD absorbing diode.
   Withstand up to 200V at C=200pF, Rs=0 conditions.
• Provide mini mold packages; CMPAK-4(SOT-343mod)

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BB301C [Build in Biasing Circuit MOS FET IC VHF RF Amplifier ] Hitachi
Hitachi -> Renesas Electronics

Features
• Build in Biasing Circuit;
   To reduce using parts cost & PC board space.
• Low noise characteristics; (NF = 1.3 dB typ. at f = 200 MHz)
• Withstanding to ESD; Build in ESD absorbing diode .
   Withstand up to 200 V at C = 200 pF,
   Rs = 0 conditions.

View
BB301CAW-TL-E [Built in Biasing Circuit MOS FET IC VHF RF Amplifier ]

other parts : BB301C 

Renesas
Renesas Electronics

Features
• Built in Biasing Circuit;
   To reduce using parts cost & PC board space.
• Low noise characteristics;
   (NF = 1.3 dB typ. at f = 200 MHz)
• Withstanding to ESD;
   Built in ESD absorbing diode.
   Withstand up to 200V at C=200pF, Rs=0 conditions.
• Provide mini mold packages; CMPAK-4(SOT-343mod)

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