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BD540B

  

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BD540B [Silicon PNP Power Transistor ] Iscsemi
Inchange Semiconductor

DESCRIPTION
• DC Current Gain -
   : hFE = 40(Min.)@ IC= -0.5A
• Collector-Emitter Breakdown Voltage-
   : V(BR)CEO= -80V(Min)
• Complement to Type BD539B

APPLICATIONS
• Designed for use in medium power linear and switching
   applications.

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BD540B [PNP SILICON POWER TRANSISTORS ]

other parts : BD540  BD540A  BD540C 

Bourns
Bourns, Inc

PNP SILICON POWER TRANSISTORS

● Designed for Complementary Use with the
   BD539 Series
● 45 W at 25°C Case Temperature
● 5 A Continuous Collector Current
● Customer-Specified Selections Available

View
BD540B [PNP SILICON POWER TRANSISTORS ]

other parts : BD540  BD540A  BD540C 

POINN
Power Innovations Ltd

PNP SILICON POWER TRANSISTORS

● Designed for Complementary Use with the
   BD539 Series
● 45 W at 25°C Case Temperature
● 5 A Continuous Collector Current
● Customer-Specified Selections Available

View
BD540B [PNP SILICON POWER TRANSISTORS ]

other parts : BD540  BD540A  BD540C 

Power-Innovations
Power Innovations

PNP SILICON POWER TRANSISTORS

● Designed for Complementary Use with the
   BD539 Series
● 45 W at 25°C Case Temperature
● 5 A Continuous Collector Current
● Customer-Specified Selections Available

View
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