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BSS110

  

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BSS110 [SIPMOS® Small-Signal Transistor ]

other parts : BSS110E6288  BSS110E6296  BSS110E6325  Q62702-S500  Q62702-S278  Q67000-S568 

Infineon
Infineon Technologies

SIPMOS ® Small-Signal Transistor

• P channel
• Enhancement mode
• Logic Level
• VGS(th) = -0.8...-2.0 V

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BSS110E6288 [SIPMOS® Small-Signal Transistor ]

other parts : BSS110  BSS110E6296  BSS110E6325  Q62702-S500  Q62702-S278  Q67000-S568 

Infineon
Infineon Technologies

SIPMOS ® Small-Signal Transistor

• P channel
• Enhancement mode
• Logic Level
• VGS(th) = -0.8...-2.0 V

View
BSS110E6296 [SIPMOS® Small-Signal Transistor ]

other parts : BSS110  BSS110E6288  BSS110E6325  Q62702-S500  Q62702-S278  Q67000-S568 

Infineon
Infineon Technologies

SIPMOS ® Small-Signal Transistor

• P channel
• Enhancement mode
• Logic Level
• VGS(th) = -0.8...-2.0 V

View
BSS110E6325 [SIPMOS® Small-Signal Transistor ]

other parts : BSS110  BSS110E6288  BSS110E6296  Q62702-S500  Q62702-S278  Q67000-S568 

Infineon
Infineon Technologies

SIPMOS ® Small-Signal Transistor

• P channel
• Enhancement mode
• Logic Level
• VGS(th) = -0.8...-2.0 V

View
BSS110 [P-channel enhancement mode vertical D-MOS transistor ] Philips
Philips Electronics

DESCRIPTION
P-channel enhancement mode vertical D-MOS transistor in a TO-92 variant package.

FEATURES
• Low threshold voltage
• Direct interface to C-MOS, TTL, etc.
• High speed switching
• No secondary breakdown.

APPLICATIONS
• Intended for use as a Line current interruptor in
   telephone sets and for applications in relay, high speed
   and line transformer drivers.
  

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BSS110 [P-Channel Enhancement Mode Field Effect Transistor ]

other parts : BSS84 

Fairchild
Fairchild Semiconductor

General Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. They can be used, with a minimum of effort, in most applications requiring up to 0.17A DC and can deliver pulsed currents up to 0.68A. This product is particularly suited to low voltage applications requiring a low current high side switch.

Features
■ BSS84: -0.13A, -50V. RDS(ON) = 10W @ VGS = -5V.
   BSS110: -0.17A, -50V. RDS(ON) = 10W @ VGS = -10V
■ Voltage controlled p-channel small signal switch.
■ High density cell design for low RDS(ON) .
■ High saturation current.

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BSS110 [SIPMOS® Small-Signal Transistor ]

other parts : Q62702-S500  Q62702-S278  Q67000-S568 

Siemens
Siemens AG

SIPMOS ® Small-Signal Transistor

• P channel
• Enhancement mode
• Logic Level
• VGS(th) = -0.8...-2.0 V

View
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