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IRF510

  

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IRF510 [MOSFET N-Chan 100V 5.6 Amp ]

other parts : IRF510PBF  SIHF510  SIHF510-E3 

Vishay
Vishay Semiconductors

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• 175 °C Operating Temperature
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available

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IRF510 [HEXFET Power MOSFETs ]

other parts : IRF511  IRF512  IRF513  IRF521  IRF522  IRF523  IRF530  IRF533  IRF540  IRF541  IRF542  IRF543  IRF610  IRF611  IRF612  IRF613  IRF614  IRF615  IRF620  IRF621  IRF622  IRF623  IRF624  IRF625  IRF630  IRF631  IRF632  IRF633  IRF634  IRF635  IRF640  IRF641  IRF642  IRF643  IRF644  IRF645  IRF711  IRF713  IRF721  IRF723  IRF731  IRF733  IRF741  IRF743  IRFZ12  IRFZ10  IRFZ22  IRFZ20  IRFZ32  IRFZ30 

ETC
Unspecified

[IR]

HEXFET Power MOSFETs

Plastic Insertable Package

TO-220 N-Channel

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IRF510 [N-Channel Power MOSFETs, 5.5 A, 60-100V ]

other parts : IRF510-513  IRF511  IRF512  IRF513  MTP4N08  MTP4N10 

Fairchild
Fairchild Semiconductor

N-Channel Power MOSFETs, 5.5 A, 60-100V

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IRF510 [4.9A, and 5.6A, 80V and 100V, 0.54 and 0.74 Ohm, N-Channel Power MOSFETs ]

other parts : IRF511  IRF512  IRF513 

Harris
Harris Semiconductor

Description
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching conver tors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Features
• 4.9A, and 5.6A, 80V and 100V
• rDS(ON) = 0.54Ω and 0.74Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
   - TB334 “Guidelines for Soldering Surface Mount
      Components to PC Boards”

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IRF510 [5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET ] Intersil
Intersil

5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Features
• 5.6A, 100V
•rDS(ON)= 0.540Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

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IRF510 [N-Channel Enhancement-Mode Vertical DMOS Power FETs ]

other parts : IRF511  IRF512  IRF513 

SUTEX
Supertex Inc

N-Channel Enhancement-Mode Vertical DMOS Power FETs

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IRF510 [HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 5.6A ] IR
International Rectifier

HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 5.6A

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IRF510A [Advanced Power MOSFET ] Fairchild
Fairchild Semiconductor

FEATURES
• Avalanche Rugged Technology
• Rugged Gate Oxide Technology
• Lower Input Capacitance
• Improved Gate Charge
• Extended Safe Operating Area
• 175°C Operating Temperature
• Lower Leakage Current : 10 μA (Max.) @ VDS= 100V
• Lower RDS(ON) : 0.289 Ω(Typ.)

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IRF510S [Power MOSFET / IRF510S, SiHF510S ]

other parts : IRF510SPBF  IRF510STRLPBF  IRF510STRRPBF  SIHF510S-E3  SIHF510S-GE3  SIHF510STL-E3a  SIHF510STR-E3a  SIHF510STRL-GE3  SIHF510STRR-GE3 

Vishay
Vishay Semiconductors

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die sizes up to HEX-4. It
provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application.

FEATURES
•Halogen-free According to IEC 61249-2-21 Definition
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• 175 °C Operating Temperature
•Fast Switching
• Ease of Paralleling
• Compliant to RoHS Directive 2002/95/EC

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IRF510S [HEXFET Power MOSFET ] IR
International Rectifier


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