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IRF510

  

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IRF510 [5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET ] Intersil
Intersil

5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Features
• 5.6A, 100V
•rDS(ON)= 0.540Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

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IRF510 [HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 5.6A ] IR
International Rectifier

HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 5.6A

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IRF510 [4.9A, and 5.6A, 80V and 100V, 0.54 and 0.74 Ohm, N-Channel Power MOSFETs ]

other parts : IRF511  IRF512  IRF513 

Harris
Harris Semiconductor

Description
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching conver tors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Features
• 4.9A, and 5.6A, 80V and 100V
• rDS(ON) = 0.54Ω and 0.74Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
   - TB334 “Guidelines for Soldering Surface Mount
      Components to PC Boards”

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IRF510 [N-Channel Power MOSFETs, 5.5 A, 60-100V ]

other parts : IRF511  IRF512  IRF513  MTP4N08  MTP4N10  IRF510-513 

Fairchild
Fairchild Semiconductor

N-Channel Power MOSFETs, 5.5 A, 60-100V

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IRF510 [N-Channel Enhancement-Mode Vertical DMOS Power FETs ]

other parts : IRF511  IRF512  IRF513 

SUTEX
Supertex Inc

N-Channel Enhancement-Mode Vertical DMOS Power FETs

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IRF510S [Power MOSFET / IRF510S, SiHF510S ]

other parts : IRF510SPBF  SIHF510S-E3  SIHF510S-GE3  IRF510STRLPBF  IRF510STRRPBF  SIHF510STL-E3a  SIHF510STR-E3a  SIHF510STRL-GE3  SIHF510STRR-GE3 

Vishay
Vishay Semiconductors

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die sizes up to HEX-4. It
provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application.

FEATURES
•Halogen-free According to IEC 61249-2-21 Definition
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• 175 °C Operating Temperature
•Fast Switching
• Ease of Paralleling
• Compliant to RoHS Directive 2002/95/EC

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IRF510S [HEXFET Power MOSFET ] IR
International Rectifier


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IRF510PBF [HEXFET POWER MOSFET ] IR
International Rectifier

HEXFET POWER MOSFET

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IRF510-513 [N-Channel Power MOSFETs, 5.5 A, 60-100V ]

other parts : IRF510  IRF511  IRF512  IRF513  MTP4N08  MTP4N10 

Fairchild
Fairchild Semiconductor

N-Channel Power MOSFETs, 5.5 A, 60-100V

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IRF510SPBF [Power MOSFET / IRF510S, SiHF510S ]

other parts : IRF510S  SIHF510S-E3  SIHF510S-GE3  IRF510STRLPBF  IRF510STRRPBF  SIHF510STL-E3a  SIHF510STR-E3a  SIHF510STRL-GE3  SIHF510STRR-GE3 

Vishay
Vishay Semiconductors

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die sizes up to HEX-4. It
provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application.

FEATURES
•Halogen-free According to IEC 61249-2-21 Definition
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• 175 °C Operating Temperature
•Fast Switching
• Ease of Paralleling
• Compliant to RoHS Directive 2002/95/EC

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