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MJE13002

  

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MJE13002 [1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND 400 VOLTS 40 WATTS ]

other parts : MJE13003 

Motorola
Motorola => Freescale

These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits.

SPECIFICATION FEATURES:
• Reverse Biased SOA with Inductive Loads @ TC= 100°C
• Inductive Switching Matrix 0.5 to 1.5 Amp, 25 and 100°C
. . . tc@ 1 A, 100°C is 290 ns (Typ).
• 700 V Blocking Capability
• SOA and Switching Applications Information.

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MJE13002 [Silicon NPN Power Transistors ] Iscsemi
Inchange Semiconductor

DESCRIPTION
·With TO-126 package
·High voltage ,high speed

APPLICATIONS
·Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/relay drivers and deflection circuits.

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MJE13002 [NPN EPITAXIAL SILICON TRANSISTOR ]

other parts : MJE13002G-A-T60-B  MJE13002G-A-T60-K  MJE13002G-A-T60-R  MJE13002G-A-T60-T  MJE13002G-A-T92-B  MJE13002G-A-T92-K  MJE13002G-A-T92-R 

UTC
Unisonic Technologies

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION
The UTC MJE13002 designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly suited for 115 and 220V switchmode applications such as switching regulator’s,inverters, DC-DC converter, Motor control, Solenoid/Relay drivers and deflection circuits.

FEATURES
*Collector-Emitter Sustaining Voltage: VCEO (sus)=300V.
*Collector-Emitter Saturation Voltage: VCE(sat)=1.0V(Max.) @Ic=1.0A, IB =0.25A
*Switch Time- tf =0.7μs(Max.) @Ic=1.0A.

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MJE13002 [Silicon NPN Power Transistors ] Savantic
SavantIC Semiconductor

DESCRIPTION
·With TO-126 package
·High voltage ,high speed

APPLICATIONS
·Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/relay drivers and deflection circuits.

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MJE13002 [NPN EPITAXIAL SILICON POWER TRANSISTORS TO-126 ]

other parts : MJE13003 

CDIL
Continental Device India Limited

Suitable for Switching Regulators, Inverters, Motor Control Solenoid/Relay Drivers and Deflection Circuits

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MJE13002 [NPN / 1.5 A Power Transistors 300-400 Volts 40 Watts ]

other parts : 13002BR  13003BR  MJE13002BR  MJE13003  MJE13003BR 

Mospec
Mospec Semiconductor

 

* Collector-Emitter Sustaining Voltage V ceo(sus) = MJE13003 : 400V and MJE13002 : 300V

 

 

 

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MJE13002B [NPN Silicon Plastic-Encapsulate Transistor ]

other parts : MJE13002B-AP  MJE13002B-BP 

MCC
Micro Commercial Components

Features
• Capable of 900mWatts of Power Dissipation.
• Collector-current 0.8A
• Collector-base Voltage 600V
• Operating and storage junction temperature range: -55OC to +150OC
• Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)
•  Epoxy meets UL 94 V-0 flammability rating
•  Moisure Sensitivity Level 1

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MJE13002A [SILICON NPN TRIPLE DIFFUSED MESA TYPE ] WingShing
Wing Shing International Group

APPLICATION:
ELECTRONIC TRANSFORMERS , POWER SWICHING CIRCUIT

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MJE13002-E [NPN EPITAXIAL SILICON TRANSISTOR ]

other parts : MJE13002G-E-A-T6S-B  MJE13002G-E-A-T6S-K  MJE13002G-E-A-T6S-R  MJE13002G-E-A-T92-B  MJE13002G-E-A-T92-K  MJE13002G-E-A-T92-R  MJE13002G-E-B-T6S-B 

UTC
Unisonic Technologies

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION
The UTC MJE13002-E designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly suited for 115 and 220V switchmode applications such as switching regulator’s,inverters, DC-DC converter, Motor control, Solenoid/Relay drivers and deflection circuits.

FEATURES
*Collector-Emitter Sustaining Voltage: VCEO (sus)=300V.
*Collector-Emitter Saturation Voltage: VCE(sat)=1.0V(Max.) @IC=1.0A, IB =0.25A
*Switch Time- tf =0.7μs(Max.) @Ic=1.0A.

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