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MMBTH10

  

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MMBTH10 [NPN SURFACE MOUNT VHF/UHF TRANSISTOR ] Diodes
Diodes Incorporated.

Features
•  Designed for VHF/UHF Amplifier Applications and High Output VHF Oscillators
•  High Current Gain Bandwidth Product
•  Ideal for Mixer and RF Amplifier Applications with collector currents in the 100μA - 30 mA Range
•  Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device
•  Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data
•  Case: SOT-23
•  Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0
•  Moisture Sensitivity: Level 1 per J-STD-020D
•  Terminals: Solderable per MIL-STD-202, Method 208
•  Terminal Connections: See Diagram
•  Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe).
•  Marking Information: K3H, K3Y; See Page 3
•  Weight: 0.008 grams (approximate)

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MMBTH10 [NPN SILICON TRANSISTOR ]

other parts : MMBTH10-A-AE3-R  MMBTH10-A-AL3-R  MMBTH10-A-AN3-R  MMBTH10-B-AE3-R  MMBTH10-B-AL3-R  MMBTH10-B-AN3-R  MMBTH10-C-AE3-R  MMBTH10-C-AL3-R  MMBTH10-C-AN3-R  MMBTH10-X-AE3-R 

UTC
Unisonic Technologies

RF TRANSISTOR

DESCRIPTION
The UTC MMBTH10 is designed for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver.

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MMBTH10 [Silicon Epitaxial Planar Transistor ]

other parts : 3EM 

BILIN
Galaxy Semi-Conductor

FEATURES
 High transition frequency.
 Power dissipation.(PC=350mW)

APPLICATIONS
VHF/UHF Transistor.

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MMBTH10 [NPN Silicon VHF/UHF Transistor ] GSME
Guilin Strong Micro-Electronics Co., Ltd.

NPN Silicon VHF/UHF Transistor

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MMBTH10 [NPN Silicon VHF/UHF Transistor ] HTSEMI
Shenzhen Jin Yu Semiconductor Co., Ltd.

TRANSISTOR(NPN)

FEATURES
● VHF/UHF Transistor

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MMBTH10 [NPN Silicon VHF/UHF Transistor ]

other parts : MMBTH10-TP 

MCC
Micro Commercial Components

Features
• Designed for VHF/UHF Amplifier applications and high output VHF Oscillators
• High current gain bandwidth product
• Marking Code: 3EM
•  Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)
•  Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1

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MMBTH10 [NPN HIGH FREQUENCY TRANSISTOR ]

other parts : MMBTH10-T/R13  MMBTH10-T/R7 

PanJit
PANJIT INTERNATIONAL

This device is designed for VHF/UHF amplifier applications and high output VHF oscillators.

SPECIFICATION FEATURES
Collector Currents up to 50mA
Guaranteed Minimum Current Gain-Bandwidth Product of 650 MHz
Industry Standard SOT-23 Package

APPLICATIONS
Low Noise VHF/UHF Amplifiers and Mixers
Low Frequency Drift, High Output Oscillators

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MMBTH10 [50mA, 30V NPN Epitaxial Planar Transistor ] Secos
Secos Corporation.

DESCRIPTION
The MMBTH10 is designed for use in VHF & UHF oscillators and VHF mixer in tuner of a TV receiver.

FEATURES
VHF/UHF Transistor

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MMBTH10 [NPN Silicon VHF/UHF Transistor ] Twtysemi
TY Semiconductor

■ Features
● High Current Gain Bandwidth Product
● Ideal for Mixer and RF Amplifier Applications

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MMBTH10 [NPN RF Transistor ]

other parts : MPSH10 

Fairchild
Fairchild Semiconductor

This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. Sourced from Process 42.

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