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SG5770

  

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SG5770 [DIODE ARRAY CIRCUITS ]

other parts : SG5772  SG6508  1N6509  SG6506  SG5768  1N5774  SG5774  SG6509  SG6507  1N6506J 

Microsemi
Microsemi Corporation

DESCRIPTION
The Linfinity series of diode arrays feature high breakdown, high speed diodes in a variety of configurations.
Each array configuration consists of either common anode diodes, common cathode diodes, or a combination of common anode and common cathode diodes.
Individual diodes within the array have 60V minimum breakdown voltage, can handle 500mA of current and typically switch in less than 10 nanoseconds.
Each of the array configurations is available in ceramic DIP or ceramic flatpack and can be processed to JANTXV, JANTX, or JAN flows at Linfinity’s MIL-S-19500 facility.

FEATURES
• 60V minimum breakdown voltage
• 500mA current capability per diode
• Fast switching speeds: typically less than 10ns
• Low leakage current

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SG5770F [DIODE ARRAY CIRCUITS ]

other parts : SG5768F  SG5772F  SG6506J  SG6507J  SG6508J 

Microsemi
Microsemi Corporation

DESCRIPTION
The Linfinity series of diode arrays feature high breakdown, high speed diodes in a variety of configurations.
Each array configuration consists of either common anode diodes, common cathode diodes, or a combination of common anode and common cathode diodes.

FEATURES
• 60V minimum breakdown voltage
• 500mA current capability per diode
• Fast switching speeds: typically less than 10ns
• Low leakage current
HIGH RELIABILITY FEATURES
♦MIL-S-19500/474 QPL - 1N5768 - 1N6506
- 1N5770 - 1N6507
- 1N5772 - 1N6508
- 1N5774 - 1N6509
♦JANTXV, JANTX & JAN available
♦LMI level "S" processing available

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