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RS202-01 [GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER ]

other parts : RS201-01  RS203-01  RS204-01  RS205-01  RS206-01  RS207-01 

Willas
Willas Electronic Corp.

VOLTAGE RANGE 50 to 1000 Volts CURRENT 2.0 Ampere

FEATURES
* Ideal for printed circuit board
* Surge overload rating: 60 amperes peak
* Mounting position: Any
* Glass Passivated chip Junctions
* RoHS product for packing code suffix "G"
   Halogen free product for packing code suffix "H"

 

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STF202-22T1G [USB Filter with ESD Protection ] ON-Semiconductor
ON Semiconductor

This device is designed for applications requiring Line Termination, EMI Filtering and ESD Protection. It is intended for use in upstream USB ports, Cellular phones, Wireless equipment and computer applications. This device offers an integrated solution in a small package (TSOP−6, Case 318G) reducing PCB space and cost.

Features:
• Provides USB Line Termination, Filtering and ESD Protection
• Single IC Offers Cost Savings by Replacing 3 Resistors,
   2 Capacitors, and 5 TVs diodes
• Bi−directional EMI Filtering Prevents Noise from Entering/Leaving
   the System
• IEC61000−4−2 ESD Protection for USB Port
• Flexible Pull−down or Pull−up Line Termination to Meet USB 1.1
   Low Speed and High Speed Specification
• ESD Ratings: Machine Model = C
   ESD Ratings: Human Body Model = 3B
• This is a Pb−Free Device

Benefits:
• TSOP−6 Package Minimizes PCB Space
• Integrated Circuit Increases System Reliability versus Discrete
   Component Implementation
• TVs Devices Provide ESD Protection That is Better than a Discrete
   Implementation because the Small IC minimizes Parasitic
   Inductances

Typical Applications:
• USB Hubs
• Computer Peripherals Using USB

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440DS031NF1202-3 [EMI/RFI Banding and Shrink Boot Adapter ]

other parts : 440-031  440FS031M2012-8BPT  440AJ031NF1402-BT  440AJ031NF1632-BT  440AS031N2006-3B  440AS031NF1002-3-58-7  440AS031NF1002-3BT 

GLENAIR
Glenair, Inc.

EMI/RFI Banding and Shrink Boot Adapter
Direct Coupling - Standard Profile

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440BS031NF1202-3A [EMI/RFI Banding and Shrink Boot Adapter ]

other parts : 440-031  440FS031M2012-8BPT  440AJ031NF1402-BT  440AJ031NF1632-BT  440AS031N2006-3B  440AS031NF1002-3-58-7  440AS031NF1002-3BT 

GLENAIR
Glenair, Inc.

EMI/RFI Banding and Shrink Boot Adapter
Direct Coupling - Standard Profile

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440DS031NF1202-3BT [EMI/RFI Banding and Shrink Boot Adapter ]

other parts : 440-031  440FS031M2012-8BPT  440AJ031NF1402-BT  440AJ031NF1632-BT  440AS031N2006-3B  440AS031NF1002-3-58-7  440AS031NF1002-3BT 

GLENAIR
Glenair, Inc.

EMI/RFI Banding and Shrink Boot Adapter
Direct Coupling - Standard Profile

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BUK202-50Y [PowerMOS transistor TOPFET high side switch ] Philips
Philips Electronics

DESCRIPTION
Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured as a single high side switch.

FEATURES
● Vertical power DMOS switch
● Low on-state resistance
● 5 V logic compatible input
● Overtemperature protection - self resets with hysteresis
● Overload protection against short circuit load
   with output current limiting; latched - reset by input
● High supply voltage load protection
● Supply undervoltage lock out
● Status indication for overload protection activated
● Diagnostic status indication of open circuit load
● Very low quiescent current
● Voltage clamping for turn off of inductive loads
● ESD protection on all pins
● Reverse battery and overvoltage protection

APPLICATIONS
   General controller for driving lamps, motors, solenoids, heaters.

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440DS031NF1202-6 [EMI/RFI Banding and Shrink Boot Adapter ]

other parts : 440-031  440FS031M2012-8BPT  440AJ031NF1402-BT  440AJ031NF1632-BT  440AS031N2006-3B  440AS031NF1002-3-58-7  440AS031NF1002-3BT 

GLENAIR
Glenair, Inc.

EMI/RFI Banding and Shrink Boot Adapter
Direct Coupling - Standard Profile

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SST39VF3202-70-4C-B3K [16 Mbit / 32 Mbit / 64 Mbit (x16) Multi-Purpose Flash Plus ]

other parts : SST39VF1601-70-4C-B3K  SST39VF1601-70-4C-EK  SST39VF1601-70-4I-B3K  SST39VF1601-70-4I-EK  SST39VF1601-90-4C-B3K  SST39VF1601-90-4C-EK  SST39VF1601-90-4I-B3K 

SST
Silicon Storage Technology

PRODUCT DESCRIPTION
The SST39VF160x/320x/640x devices are 1M x16, 2M x16, and 4M x16 respectively, CMOS Multi-Purpose Flash Plus (MPF+) manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF160x/320x/640x
write (Program or Erase) with a 2.7-3.6V power supply. These devices conform to JEDEC standard pinouts for x16 memories.

 

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SST39VF3202-70-4C-B3KE [16 Mbit / 32 Mbit / (x16) Multi-Purpose Flash Plus ]

other parts : SST39VF1601  SST39VF1601-70-4C-B3KE-T  SST39VF1601-70-4C-EKE-T  SST39VF1601-70-4I-B3KE-T  SST39VF1601-70-4I-EKE-T  SST39VF1601-90-4C-B3KE  SST39VF1601-90-4C-EKE 

SST
Silicon Storage Technology

PRODUCT DESCRIPTION
The SST39VF160x and SST39VF320x devices are 1M x16 and 2M x16, respectively, CMOS Multi-Purpose Flash Plus (MPF+) manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF160x/320x write (Program or Erase) with a 2.7-3.6V power supply. These devices conform to JEDEC standard pinouts for x16 memories.
Featuring high performance Word-Program, the SST39VF160x/320x devices provide a typical Word-Program time of 7 µsec. These devices use Toggle Bit or Data# Polling to indicate the completion of Program operation. To protect against inadvertent write, they have on-chip hardware and Software Data Protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, these devices are offered with a guaranteed typical endurance of 100,000 cycles. Data retention is rated at greater than 100 years.

FEATURES:
• Organized as
   1M x16: SST39VF1601/1602
   2M x16: SST39VF3201/3202
• Single Voltage Read and Write Operations
   – 2.7-3.6V
• Superior Reliability
   – Endurance: 100,000 Cycles (Typical)
   – Greater than 100 years Data Retention
• Low Power Consumption (typical values at 5 MHz)
   – Active Current: 9 mA (typical)
   – Standby Current: 3 µA (typical)
   – Auto Low Power Mode: 3 µA (typical)
• Hardware Block-Protection/WP# Input Pin
   – Top Block-Protection (top 32 KWord)
      for SST39VF1602/3202
   – Bottom Block-Protection (bottom 32 KWord)
      for SST39VF1601/3201
• Sector-Erase Capability
   – Uniform 2 KWord sectors
• Block-Erase Capability
   – Uniform 32 KWord blocks
• Chip-Erase Capability
• Erase-Suspend/Erase-Resume Capabilities
• Hardware Reset Pin (RST#)
• Security-ID Feature
   – SST: 128 bits; User: 128 bits
• Fast Read Access Time:
   – 70 ns
• Latched Address and Data
• Fast Erase and Word-Program:
   – Sector-Erase Time: 18 ms (typical)
   – Block-Erase Time: 18 ms (typical)
   – Chip-Erase Time: 40 ms (typical)
   – Word-Program Time: 7 µs (typical)
• Automatic Write Timing
   – Internal VPP Generation
• End-of-Write Detection
   – Toggle Bits
   – Data# Polling
• CMOS I/O Compatibility
• JEDEC Standard
   – Flash EEPROM Pinouts and command sets
• Packages Available
   – 48-lead TSOP (12mm x 20mm)
   – 48-ball TFBGA (6mm x 8mm)
• All non-Pb (lead-free) devices are RoHS compliant

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SST39VF3202-70-4C-B3KE-T [16 Mbit / 32 Mbit / (x16) Multi-Purpose Flash Plus ]

other parts : SST39VF1601  SST39VF1601-70-4C-B3KE-T  SST39VF1601-70-4C-EKE-T  SST39VF1601-70-4I-B3KE-T  SST39VF1601-70-4I-EKE-T  SST39VF1601-90-4C-B3KE  SST39VF1601-90-4C-EKE 

SST
Silicon Storage Technology

PRODUCT DESCRIPTION
The SST39VF160x and SST39VF320x devices are 1M x16 and 2M x16, respectively, CMOS Multi-Purpose Flash Plus (MPF+) manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF160x/320x write (Program or Erase) with a 2.7-3.6V power supply. These devices conform to JEDEC standard pinouts for x16 memories.
Featuring high performance Word-Program, the SST39VF160x/320x devices provide a typical Word-Program time of 7 µsec. These devices use Toggle Bit or Data# Polling to indicate the completion of Program operation. To protect against inadvertent write, they have on-chip hardware and Software Data Protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, these devices are offered with a guaranteed typical endurance of 100,000 cycles. Data retention is rated at greater than 100 years.

FEATURES:
• Organized as
   1M x16: SST39VF1601/1602
   2M x16: SST39VF3201/3202
• Single Voltage Read and Write Operations
   – 2.7-3.6V
• Superior Reliability
   – Endurance: 100,000 Cycles (Typical)
   – Greater than 100 years Data Retention
• Low Power Consumption (typical values at 5 MHz)
   – Active Current: 9 mA (typical)
   – Standby Current: 3 µA (typical)
   – Auto Low Power Mode: 3 µA (typical)
• Hardware Block-Protection/WP# Input Pin
   – Top Block-Protection (top 32 KWord)
      for SST39VF1602/3202
   – Bottom Block-Protection (bottom 32 KWord)
      for SST39VF1601/3201
• Sector-Erase Capability
   – Uniform 2 KWord sectors
• Block-Erase Capability
   – Uniform 32 KWord blocks
• Chip-Erase Capability
• Erase-Suspend/Erase-Resume Capabilities
• Hardware Reset Pin (RST#)
• Security-ID Feature
   – SST: 128 bits; User: 128 bits
• Fast Read Access Time:
   – 70 ns
• Latched Address and Data
• Fast Erase and Word-Program:
   – Sector-Erase Time: 18 ms (typical)
   – Block-Erase Time: 18 ms (typical)
   – Chip-Erase Time: 40 ms (typical)
   – Word-Program Time: 7 µs (typical)
• Automatic Write Timing
   – Internal VPP Generation
• End-of-Write Detection
   – Toggle Bits
   – Data# Polling
• CMOS I/O Compatibility
• JEDEC Standard
   – Flash EEPROM Pinouts and command sets
• Packages Available
   – 48-lead TSOP (12mm x 20mm)
   – 48-ball TFBGA (6mm x 8mm)
• All non-Pb (lead-free) devices are RoHS compliant

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