DatasheetQ Logo
Electronic Components and Semiconductors search and free download site. Transistors,MosFET,IGBT,Triac,SCR,Diode,Integrated circuits

MMBF170 - N-Channel Enhancement Mode Field Effect Transistor - Fairchild Semiconductor Datasheet

MMBF170 Datasheet PDF Fairchild Semiconductor

Part Name
MMBF170

Other PDF
  1995  

PDF

page
5 Pages

File Size
1.2 MB

MFG CO.
Fairchild
Fairchild Semiconductor 

General Description
These N-Channel enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 500mA DC. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.


FEATUREs
■ High density cell design for low RDS(ON).
■ Voltage controlled small signal switch.
■ Rugged and reliable.
■ High saturation current capability.

Part Name
Description
PDF
MFG CO.
N-channel enhancement mode field-effect transistor
Philips Electronics
N-channel enhancement mode field-effect transistor
Philips Electronics
N-channel enhancement mode field-effect transistor
Philips Electronics
N-channel enhancement mode field-effect transistor
Philips Electronics
N-channel enhancement mode field-effect transistor
Philips Electronics
N-channel enhancement mode field-effect transistor
NXP Semiconductors.
N-channel enhancement mode field-effect transistor
Philips Electronics
N-channel enhancement mode field-effect transistor
Philips Electronics
N-channel enhancement mode field-effect transistor
Philips Electronics
N-channel enhancement mode field-effect transistor
NXP Semiconductors.

Share Link: 

All Rights Reserved© datasheetq.com  [Privacy Policy ] [ Request Datasheet] [Contact Us]