C3355 - Silicon NPN RF Transistor - Inchange Semiconductor Datasheet

DESCRIPTION
• Low Noise and High Gain
   NF = 1.1 dB TYP., Ga = 8.0 dB TYP.
   @VCE = 10 V, IC = 7 mA, f = 1.0 GHz
   NF = 1.1 dB TYP., Ga = 9.0 dB TYP.
   @VCE = 10 V, IC = 40 mA, f = 1.0 GHz
• High Power Gain
   MAG= 11 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz

APPLICATIONS
• Designed for low noise amplifier at VHF, UHF and CATV band.