2SA1012O Datasheet PDF

2SA1012O Datasheet - Toshiba

Part Name

2SA1012O

Description

TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS)

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MFG CO.

Toshiba

HIGH CURRENT SWITCHING APPLICATIONS.

â FEATURES
* Low collector saturation voltage
VCE(SAT)=-0.4V(max.) at Ic=-3A
* High speed switching time: tS=1.0µs(Typ.)
* Complementary to 2SC2562

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