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2SA1015L(2003) Datasheet - Toshiba

2SA1015L Datasheet PDF Toshiba

Part Name
2SA1015L

Other PDF
  not available.

page
3 Pages

File Size
104 kB

MFG CO.
Toshiba
Toshiba Toshiba

Audio Frequency Amplifier Applications
Low Noise Amplifier Applications

● High voltage and high current: VCEO = −50 V (min),
                                                     IC = −150 mA (max)
● Excellent hFE linearity: hFE (2) = 80 (typ.) at VCE = −6 V, IC = −150 mA
                                       : hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.)
● Low noise: NF = 0.2dB (typ.) (f = 1 kHz)
● Complementary to 2SC1815 (L)

Page Link's: 1  2  3 

Part Name
Description
PDF
MFG CO.
Transistor Silicon PNP Epitaxial Type (PCT process)
Sensitron
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
Unspecified
Silicon PNP Epitaxial Type (PCT Process)
Unspecified
Silicon PNP Transistor Epitaxial Planar Type(PCT PROCESS)
KEC
SILICON PNP TRANSISTOR EPITAXIAL PLANAR TYPE (PCT PROCESS)
KEC
SILICON PNP TRANSISTOR EPITAXIAL PLANAR TYPE (PCT PROCESS)
KEC
SILICON PNP TRANSISTOR EPITAXIAL PLANAR TYPE (PCT PROCESS)
KEC
SILICON PNP TRANSISTOR EPITAXIAL PLANAR TYPE (PCT PROCESS)
KEC
SILICON PNP EPITAXIAL TRANSISTOR (PCT PROCESS)
Unspecified
SILICON PNP EPITAXIAL TRANSISTOR(PCT PROCESS)
Unspecified

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