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2SD2130 Datasheet - Toshiba

2SD2130 Datasheet PDF Toshiba

Part Name
2SD2130

Other PDF
  not available.

page
5 Pages

File Size
152.8 kB

MFG CO.
Toshiba
Toshiba Toshiba

Micro Motor Drive, Hammer Drive Applications
Switching Applications
Power Amplifier Applications

● High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
● Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A, IB = 10 mA)
● Zener diode included between collector and base.

Page Link's: 1  2  3  4  5 

Part Name
Description
PDF
MFG CO.
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (DARLINGTON POWER TRANSISTOR)
Unspecified
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON)
Unspecified
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
Unspecified
NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR ( Rev : RevA )
Unisonic Technologies
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
TY Semiconductor
NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR
Unisonic Technologies
NPN Silicon Epitaxial Darlington Transistor
Unspecified
NPN Epitaxial Silicon Darlington Transistor
Fairchild Semiconductor
NPN Epitaxial Silicon Darlington Transistor
Fairchild Semiconductor
NPN Epitaxial Silicon Darlington Transistor ( Rev : 2002 )
Fairchild Semiconductor

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