General Description
This Power MOSFET is produced using Winsemis advancedplanar stripe,VDMOS technology. this latest technology has beenespecially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially wellsuited for AC-DC switching power supplies, DC-DC power Converters high voltage H-bridge motor drive PWM.
Features
â¾ 11A,500V,RDS(on)(Max0.55â¦)@VGS=10V
â¾ Ultra-low Gate charge(Typical 43nC)
â¾ Fast Switching Capability
â¾ 100%Avalanche Tested
â¾ Maximum Junction Temperature Range(150â)
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