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2SK2615(TE12L,F) Datasheet - Toshiba

2SK2615(TE12L,F) Datasheet PDF Toshiba

Part Name
2SK2615(TE12L,F)

Other PDF
  not available.

page
6 Pages

File Size
376.2 kB

MFG CO.
Toshiba
Toshiba Toshiba

DC−DC Converter, Relay Drive and Motor Drive
Applications

• Low drain−source ON resistance : RDS (ON) = 0.23 Ω (typ.)
• High forward transfer admittance : |Yfs| = 2.0 S (typ.)
• Low leakage current : IDSS = 100 μA (max) (VDS = 60 V)
• Enhancement mode : Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA)

Page Link's: 1  2  3  4  5  6 

Part Name
Description
PDF
MFG CO.
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
Unspecified
Field Effect Transistor Silicon N Channel MOS Type
New Jersey Semiconductor
N-channel MOS Type Silicon Field Effect Transistor
SANYO -> Panasonic
Field Effect Transistor Silicon N-Channel MOS Type
Unspecified
N channel MOS type silicon field effect transistor ( Rev : V2 )
SANYO -> Panasonic
N channel MOS type silicon field effect transistor
SANYO -> Panasonic
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
SANYO -> Panasonic
TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L2−Π−MOSV)
Unspecified
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSV)
Unspecified
Silicon N-Channel MOS Field Effect Transistor ( Rev : 2011 )
Diotec Semiconductor Germany

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