DESCRIPTION
Gallium Aluminum Arsenide (GaAlAs) infrared LED and a highgain N-P-N silicon phototransistor packaged in a hermetically sealed metal case. The 4N22A, 4N23Aand 4N24Acan be tested to customer specifications, as well as to MIL-PRF-19500 JAN, JANS, JANTX, and JANTXV quality levels.
Features:
⢠Collector is electrically isolated from the case.
⢠Overall current gain...1.5 typical (4N24A)
⢠Base lead provided for conventional transistor biasing
⢠Rugged package
⢠High gain, high voltage transistor
⢠+1kV electrical isolation
Applications:
⢠Eliminate ground loops
⢠Level shifting
⢠Line receiver
⢠Switching power supplies
⢠Motor control
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