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74AHC1G09GV Datasheet - NXP Semiconductors.

74AHC1G09GV Datasheet PDF NXP Semiconductors.

Part Name
74AHC1G09GV

Other PDF
  not available.

page
10 Pages

File Size
45.4 kB

MFG CO.
NXP
NXP Semiconductors. NXP

General description
The 74AHC1G09 is a high-speed Si-gate CMOS device. The 74AHC1G09 provides the 2-input AND function with open-drain output. The output of the 74AHC1G09 is an open drain and can be connected to other open-drain outputs to implement active-LOW, wired-OR or active-HIGH wired-AND functions. For digital operation this device must have a pull-up resistor to establish a logic HIGH level.

Features
■ High noise immunity
■ Low power dissipation
■ SOT353-1 and SOT753 package options
■ ESD protection:
  ◆ HBM JESD22-A114E: exceeds 2000 V
  ◆ MM JESD22-A115-A: exceeds 200 V
  ◆ CDM JESD22-C101C: exceeds 1000 V
■ Specified from −40 °C to +85 °C and from −40 °C to +125 °C.

Page Link's: 1  2  3  4  5  6  7  8  9  10  More Pages 

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