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AM29F100B-120DGE Datasheet - Advanced Micro Devices

AM29F100B-120DGE Datasheet PDF Advanced Micro Devices

Part Name
AM29F100B-120DGE

Other PDF
  not available.

page
8 Pages

File Size
53.2 kB

MFG CO.
AMD
Advanced Micro Devices AMD

GENERAL DESCRIPTION
The Am29F100 in Known Good Die (KGD) form is a 1 Mbit, 5.0 Volt-only Flash memory. AMD defines KGD as standard product in die form, tested for functionality and speed. AMD KGD products have the same reliability and quality as AMD products in packaged form.

DISTINCTIVE CHARACTERISTICS
■ Single power supply operation
   — 5.0 V ± 10% for read, erase, and program operations
   — Simplifies system-level power requirements
■ High performance
   — 120 ns maximum access time
■ Low power consumption
   — 20 mA typical active read current for byte mode
   — 28 mA typical active read current for word mode
   — 30 mA typical program/erase current
   — 25 µA typical standby current
■ Flexible sector architecture
   — One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
      one 64 Kbyte sectors (byte mode)
   — One 8 Kword, two 4 Kword, one 16 Kword, and
      one 32 Kword sectors (word mode)
   — Any combination of sectors can be erased
   — Supports full chip erase
■ Top or bottom boot block configurations available
■ Sector protection
   — Hardware-based feature that disables/reenables
      program and erase operations in any combination of sectors
   — Sector protection/unprotection can be
      implemented using standard PROM
      programming equipment
   — Temporary Sector Unprotect feature allows in
      system code changes in protected sectors
■ Embedded Algorithms
   — Embedded Erase algorithm automatically
      pre-programs and erases the chip or any
      combination of designated sector
   — Embedded Program algorithm automatically
      programs and verifies data at specified address
■ Minimum 100,000 program/erase cycles guaranteed
■ Compatible with JEDEC standards
   — Pinout and software compatible with
      single-power-supply flash
   — Superior inadvertent write protection
■ Data Polling and Toggle Bits
   — Provides a software method of detecting
      program or erase cycle completion
■ Ready/Busy pin (RY/BY#)
   — Provides a hardware method for detecting
      program or erase cycle completion
■ Erase Suspend/Erase Resume
   — Suspends an erase operation to read data from,
      or program data to, a sector that is not being
      erased, then resumes the erase operation
■ Hardware RESET# pin
   — Hardware method of resetting the device to
      reading array data
■ Tested to datasheet specifications at temperature
■ Quality and reliability levels equivalent to
   standard packaged components

Page Link's: 1  2  3  4  5  6  7  8 

Part Name
Description
PDF
MFG CO.
1 Megabit (128 K x 8-bit) Uniform Sector Flash Memory CMOS 5.0 Volt-only
Force Technologies Ltd
1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only/ Uniform Sector Flash Memory
Spansion Inc.
4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory
Spansion Inc.
8 Megabit (1 M x 8-Bit/512 K x 16-Bit)CMOS 3.0 Volt-only Boot Sector Flash Memory
Spansion Inc.
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
Spansion Inc.
1 Megabit (128 K x 8-Bit) CMOS EPROM
Unspecified
4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only/ Uniform Sector Flash Memory
Spansion Inc.
4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
Spansion Inc.
4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
Force Technologies Ltd
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 5.0 Volt-only
Eon Silicon Solution Inc.

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