Darlington Complementary Silicon Power Transistors
This series of plastic, medium-power silicon NPN and PNP Darlington transistors are designed for general purpose and low speed switching applications.
Features
⢠High DCCurrent Gain - hFE = 2500 (typ) @ Ic = 5.0Adc.
⢠Collector Emitter Sustaining Voltage @ 30mAdc:
VCEO(SUS) = 80Vdc(mm) - BDW46
100 Vdc (min.) - BDW42/BDW47
⢠LowCollector Emitter Saturation Voltage
VcE(sat) = 2.0 Vdc (max) @ Ic = 5.0 Adc
3.0 Vdc (max) r§ Ic = 10.0 Adc
⢠Monolithic Construction with Built-in Base Emitter Shunt resistors
⢠TO-220AB Compact Package
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