Darlington Complementary Silicon Power Transistors
This series of plastic, mediumâpower silicon NPN and PNP Darlington transistors are designed for general purpose and low speed switching applications.
Features
⢠High DC Current Gain â hFE = 2500 (typ) @ IC = 5.0 Adc.
⢠Collector Emitter Sustaining Voltage @ 30 mAdc:
VCEO(sus) = 80 Vdc (min) â BDW46
100 Vdc (min) â BDW42/BDW47
⢠Low Collector Emitter Saturation Voltage
VCE(sat) = 2.0 Vdc (max) @ IC = 5.0 Adc
3.0 Vdc (max) @ IC = 10.0 Adc
⢠Monolithic Construction with BuiltâIn Base Emitter Shunt resistors
⢠TOâ220AB Compact Package
⢠PbâFree Packages Are Available*
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