Power Transistor
4.0 Amp NPN Silicon Power Transistor Chip
PROCESS DETAILS
Die Size 105 x 105 MILS
Die Thickness 8.5 MILS
Base Bonding Pad Area 32 x 19 MILS
Emitter Bonding Pad Area 28 x 22 MILS
Top Side Metalization Al - 45,000Ã
Back Side Metalization Ti/Ni/Ag - (300Ã
, 1,000Ã
, 10,000Ã
)
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