N-Channel SuperFET® II MOSFET 600 V, 7.4 A, 600 mΩ
Description
SuperFET® II MOSFET is Fairchild Semiconductorâs brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
Features
⢠650 V @ TJ = 150°C
⢠Typ. RDS(on) = 510 mΩ
⢠Ultra Low Gate Charge (Typ. Qg = 20 nC)
⢠Low Effective Output Capacitance (Typ. Coss(eff.) = 74 pF)
⢠100% Avalanche Tested
⢠ESD Improved Capacity
⢠RoHS Compliant
Applications
⢠LCD / LED / PDP TV and Monitor Lighting
⢠Solar Inverter
⢠AC-DC Power Supply
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