General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
Features
⢠1.4 A, 150 V.
RDS(ON) = 425 m⦠@ VGS = 10 V
RDS(ON) = 475 m⦠@ VGS = 6 V
⢠High performance trench technology for extremely
low RDS(ON)
⢠Low gate charge (8nC typ)
⢠High power and current handling capability
⢠Fast switching speed
Applications
⢠DC/DC converter
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