General Description
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
Features
⢠38 A, 60 V. RDS(on) = 0.021 ⦠@ VGS = 10 V
RDS(on) = 0.025 ⦠@ VGS = 6 V.
⢠Low gate charge (33nC typical).
⢠Fast switching speed.
⢠High performance trench technology for extremely
low RDS(on).
Applications
⢠DC/DC converter
⢠Motor drives
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