General Description
The N & P-Channel MOSFETs are produced using Fairchild Semiconductorâs advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive TSSOP-8 and SSOP-6 packages are impractical.
Features
⢠Q1 0.7 A, 20V.
RDS(ON) = 300 mW @ VGS = 4.5 V
RDS(ON) = 400 mW @ VGS = 2.5 V
⢠Q2 â0.6 A, â20V.
RDS(ON) = 420 mW @ VGS = â4.5 V
RDS(ON) = 630 mW @ VGS = â2.5 V
⢠Low gate charge
⢠High performance trench technology for extremely low RDS(ON)
⢠SC70-6 package: small footprint (51% smaller than
SSOT-6); low profile (1mm thick)
Applications
⢠DC/DC converter
⢠Load switch
⢠LCD display inverter
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