General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for âlow sideâ synchronous rectifier operation, providing an extremely low RDS(ON)in a small package.
Features
· 4.1 A, 150 V. Rds(on) = 78mW@ Vgs= 10V
Rds(on) = 88mW@ Vgs= 6.0V
· High performance trench technology for extremely low Rds(on)
· High power and current handling capability
· Fast switching, low gate charge (38nC typical)
· FLMP SO-8 package: Enhanced thermal performance in industry-standard package size
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