General Description
These N-Channel MOSFETs have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
   
Features
• 1.3 A, 100 V. RDS(ON) = 480 mΩ @ VGS = 10 V
                        RDS(ON) = 530 mΩ @ VGS = 6 V
• Fast switching speed
• Low gate charge (3.7nC typical)
• High performance trench technology for extremely
    low RDS(ON)
• High power and current handling capability